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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 6, 2009, Pages 1289-1302

Mechanisms for plasma etching of HfO2 gate stacks with Si selectivity and photoresist trimming

(2) Shoeb, Juline a Kushner, Mark J b

a Iowa State University (United States)

b UNIVERSITY OF MICHIGAN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION LAYERS; DIELECTRIC CONSTANTS; ETCH RATES; GATE STACKS; ION ENERGIES; ION IMPACT; METAL GATE; METAL OXIDES; SCALE MODELING; SINGLE PROCESS; VOLATILE ETCH PRODUCTS;

HAFNIUM COMPOUNDS; ION BOMBARDMENT; LEAKAGE CURRENTS; LOGIC GATES; PHOTORESISTORS; PLASMA ETCHING; PLASMAS; SILICON; SILICON COMPOUNDS; SURFACE TREATMENT; TRIMMING;

FIELD EFFECT TRANSISTORS;

EID: 71049129863 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3231480 Document Type: Article

Times cited : (13)

References (30)

1
- 19944370832
- Application of high-κ gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology
- DOI 10.1016/j.mee.2005.04.035, PII S0167931705001735, 14th Biennial Conference on Insulating Films on Semiconductors
- R. Chau, Microelectron. Eng. 0167-9317 80, 1 (2005). 10.1016/j.mee.2005. 04.035 (Pubitemid 40753037)
- (2005) Microelectronic Engineering , vol.80 , Issue.SUPPL. , pp. 1-6
- Chau, R.¹ Brask, J.² Datta, S.³ Dewey, G.⁴ Doczy, M.⁵ Doyle, B.⁶ Kavalieros, J.⁷ Jin, B.⁸ Metz, M.⁹ Majumdar, A.¹⁰ Radosavljevic, M.¹¹

2
- 0000361018
- 0003-6951,. 10.1063/1.126214
- B. H. Lee, L. Kang, R. Nieh, W. -J. Qi, and J. C. Lee, Appl. Phys. Lett. 0003-6951 76, 1926 (2000). 10.1063/1.126214
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1926
- Lee, B.H.¹ Kang, L.² Nieh, R.³ Qi, W.-J.⁴ Lee, J.C.⁵

3
- 2942702306
- 0741-3106,. 10.1109/LED.2004.828570
- R. Chau, S. Datta, M. Doczy, B. Doyle, J. Kavalieros, and M. Metz, IEEE Electron Device Lett. 0741-3106 25, 408 (2004). 10.1109/LED.2004.828570
- (2004) IEEE Electron Device Lett. , vol.25 , pp. 408
- Chau, R.¹ Datta, S.² Doczy, M.³ Doyle, B.⁴ Kavalieros, J.⁵ Metz, M.⁶

4
- 34648818191
- 3 plasmas
- DOI 10.1116/1.2781550
- E. Sungauer, E. Pargon, X. Mellhaoui, R. Ramos, G. Cunge, L. Valier, O. Joubert, and T. Lill, J. Vac. Sci. Technol. B 1071-1023 25, 1640 (2007). 10.1116/1.2781550 (Pubitemid 47463655)
- (2007) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.25 , Issue.5 , pp. 1640-1646
- Sungauer, E.¹ Pargon, E.² Mellhaoui, X.³ Ramos, R.⁴ Cunge, G.⁵ Vallier, L.⁶ Joubert, O.⁷ Lill, T.⁸

5
- 0041510476
- 0021-8979,. 10.1063/1.1587887
- M. J. Kushner, J. Appl. Phys. 0021-8979 94, 1436 (2003). 10.1063/1.1587887
- (2003) J. Appl. Phys. , vol.94 , pp. 1436
- Kushner, M.J.¹

6
- 0001030504
- 0021-8979,. 10.1063/1.371040
- C. F. Abrams and D. B. Graves, J. Appl. Phys. 0021-8979 86, 2263 (1999). 10.1063/1.371040
- (1999) J. Appl. Phys. , vol.86 , pp. 2263
- Abrams, C.F.¹ Graves, D.B.²

7
- 58149492962
- 0734-2101,. 10.1116/1.3021361
- A. Agarwal and M. J. Kushner, J. Vac. Sci. Technol. A 0734-2101 27, 37 (2009). 10.1116/1.3021361
- (2009) J. Vac. Sci. Technol. A , vol.27 , pp. 37
- Agarwal, A.¹ Kushner, M.J.²

8
- 0842333287
- 0734-2101,. 10.1116/1.1615975
- L. Sha and J. P. Chang, J. Vac. Sci. Technol. A 0734-2101 21, 1915 (2003). 10.1116/1.1615975
- (2003) J. Vac. Sci. Technol. A , vol.21 , pp. 1915
- Sha, L.¹ Chang, J.P.²

9
- 1242306903
- 0734-2101,. 10.1116/1.1627771
- L. Sha and J. P. Chang, J. Vac. Sci. Technol. A 0734-2101 22, 88 (2004). 10.1116/1.1627771
- (2004) J. Vac. Sci. Technol. A , vol.22 , pp. 88
- Sha, L.¹ Chang, J.P.²

10
- 33745513672
- 2 inductively coupled plasmas
- DOI 10.1116/1.2210944, 137604JVA
- M. H. Shin, M. S. Park, N. -E. Lee, J. Kim, C. Y. Kim, and J. Anh, J. Vac. Sci. Technol. A 0734-2101 24, 1373 (2006). 10.1116/1.2210944 (Pubitemid 43959172)
- (2006) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.24 , Issue.4 , pp. 1373-1379
- Shin, M.H.¹ Park, M.S.² Lee, N.-E.³ Kim, J.⁴ Kim, C.Y.⁵ Ahn, J.⁶

11
- 46449124156
- 0734-2101,. 10.1116/1.2938396
- C. Wang and V. M. Donnelly, J. Vac. Sci. Technol. A 0734-2101 26, 597 (2008). 10.1116/1.2938396
- (2008) J. Vac. Sci. Technol. A , vol.26 , pp. 597
- Wang, C.¹ Donnelly, V.M.²

12
- 58449084643
- 10.1143/APEX.2.016503
- K. Nakamura, D. Hamada, Y. Ueda, K. Eriguchi, and K. Ono, Appl. Phys. Exp. 2, 016503 (2009). 10.1143/APEX.2.016503
- (2009) Appl. Phys. Exp. , vol.2 , pp. 016503
- Nakamura, K.¹ Hamada, D.² Ueda, Y.³ Eriguchi, K.⁴ Ono, K.⁵

13
- 0942300080
- 1071-1023,. 10.1116/1.1627333
- L. Sha, R. Puthenkovilakam, Y. -S. Lin, and J. P. Chang, J. Vac. Sci. Technol. B 1071-1023 21, 2420 (2003). 10.1116/1.1627333
- (2003) J. Vac. Sci. Technol. B , vol.21 , pp. 2420
- Sha, L.¹ Puthenkovilakam, R.² Lin, Y.-S.³ Chang, J.P.⁴

14
- 71049178394
- Nagoya Institute of Technology Technical Report No. IPPJ-AM-19.
- M. Hayashi, Nagoya Institute of Technology Technical Report No. IPPJ-AM-19, 1981.
- (1981)
- Hayashi, M.¹

15
- 0000267513
- 1050-2947,. 10.1103/PhysRevA.34.1007
- K. Tachibana, Phys. Rev. A 1050-2947 34, 1007 (1986). 10.1103/PhysRevA.34.1007
- (1986) Phys. Rev. A , vol.34 , pp. 1007
- Tachibana, K.¹

16
- 30844450637
- 0021-9606,. 10.1063/1.1696957
- D. Rapp and P. Englander-Golden, J. Chem. Phys. 0021-9606 43, 1464 (1965). 10.1063/1.1696957
- (1965) J. Chem. Phys. , vol.43 , pp. 1464
- Rapp, D.¹ Englander-Golden, P.²

17
- 0001016171
- 10.1103/PhysRev.137.A1058
- R. H. McFarland and J. Kinney, Phys. Rev. 137, A1058 (1965). 10.1103/PhysRev.137.A1058
- (1965) Phys. Rev. , vol.137 , pp. 1058
- McFarland, R.H.¹ Kinney, J.²

18
- 0001436868
- 0030-400X
- I. P. Zapesochnyi and L. L. Shimon, Opt. Spectrosc. 0030-400X 11, 155 (1966).
- (1966) Opt. Spectrosc. , vol.11 , pp. 155
- Zapesochnyi, I.P.¹ Shimon, L.L.²

19
- 0022703124
- 0093-3813,. 10.1109/TPS.1986.4316512
- G. L. Rogoff, J. M. Kramer, and R. B. Piejak, IEEE Trans. Plasma Sci. 0093-3813 14, 103 (1986). 10.1109/TPS.1986.4316512
- (1986) IEEE Trans. Plasma Sci. , vol.14 , pp. 103
- Rogoff, G.L.¹ Kramer, J.M.² Piejak, R.B.³

20
- 0000518221
- 0003-6951,. 10.1063/1.111859
- R. Nagpal and A. Garscadden, Appl. Phys. Lett. 0003-6951 64, 1626 (1994). 10.1063/1.111859
- (1994) Appl. Phys. Lett. , vol.64 , pp. 1626
- Nagpal, R.¹ Garscadden, A.²

21
- 0000248657
- 0368-1947
- J. Marriott and J. D. Craggs, J. Electron. Control 0368-1947 3, 194 (1957).
- (1957) J. Electron. Control , vol.3 , pp. 194
- Marriott, J.¹ Craggs, J.D.²

22
- 71049149796
- 0370-1573,. 10.1016/0370-1573(90)90159-Y
- J. B. A. Mitchell, Phys. Rep. 0370-1573 186, 215 (1990). 10.1016/0370-1573(90)90159-Y
- (1990) Phys. Rep. , vol.186 , pp. 215
- Mitchell, J.B.A.¹

23
- 0001998551
- 0047-2689 (Suppl. 1).
- S. G. Lias, J. E. Bartmess, J. F. Liebman, J. L. Holmes, R. D. Levin, and W. G. Mallard, J. Phys. Chem. Ref. Data 0047-2689 17 (Suppl. 1), 1 (1988).
- (1988) J. Phys. Chem. Ref. Data , vol.17 , pp. 1
- Lias, S.G.¹ Bartmess, J.E.² Liebman, J.F.³ Holmes, J.L.⁴ Levin, R.D.⁵ Mallard, W.G.⁶

24
- 0003592354
- (Mass Spectroscopy Society of Japan, Tokyo).
- Y. Ikezoe, S. Matsuoka, M. Takabe, and A. Viggiano, Gas Phase Ion-Molecule Reaction Rate Constants Through 1986 (Mass Spectroscopy Society of Japan, Tokyo, 1987).
- (1987) Gas Phase Ion-Molecule Reaction Rate Constants Through 1986
- Ikezoe, Y.¹ Matsuoka, S.² Takabe, M.³ Viggiano, A.⁴

25
- 71049116139
- NIST Chemical Kinetics Database 17, version 2Q98, see.
- NIST Chemical Kinetics Database 17, version 2Q98, see: http://kinetics.nist.gov/index.php.

26
- 31044439269
- Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma
- DOI 10.1116/1.1927536
- W. S. Hwang, J. Chen, and W. J. Yoo, J. Vac. Sci. Technol. A 0734-2101 23, 964 (2005). 10.1116/1.1927536 (Pubitemid 43119234)
- (2005) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , vol.23 , Issue.4 , pp. 964-970
- Hwang, W.S.¹ Chen, J.² Yoo, W.J.³ Bliznetsov, V.⁴

27
- 0036026365
- 2 plasmas for sub-0.1 μm device fabrication
- DOI 10.1116/1.1503791
- C. -Y. Sin, B. H. Chen, W. L. Loh, J. Yu, P. Yelehanka, A. See, and L. Chan, J. Vac. Sci. Technol. B 1071-1023 20, 1974 (2002). 10.1116/1.1503791 (Pubitemid 35358835)
- (2002) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.20 , Issue.5 , pp. 1974-1981
- Sin, C.-Y.¹ Chen, B.-H.² Loh, W.L.³ Yu, J.⁴ Yelehanka, P.⁵ See, A.⁶ Chan, L.⁷

28
- 3042767253
- Effect of halogen in high-density oxygen plasmas on photoresist trimming
- DOI 10.1002/aic.10145
- C. -Y. Sin, B. H. Chen, W. L. Loh, J. Yu, P. Yelehanka, A. See, and L. Chan, AIChE J. 0001-1541 50, 1578 (2004). 10.1002/aic.10145 (Pubitemid 38856782)
- (2004) AIChE Journal , vol.50 , Issue.7 , pp. 1578-1588
- Sin, C.-Y.¹ Chen, B.-H.² Loh, W.L.³ Yu, J.⁴ Yelehanka, P.⁵ See, A.⁶ Chan, L.⁷

29
- 3142708886
- 0167-9317,. 10.1016/j.mee.2004.05.004
- T. -F. Yen, C. M. Chiu, and K. F. Chiu, Microelectron. Eng. 0167-9317 75, 201 (2004). 10.1016/j.mee.2004.05.004
- (2004) Microelectron. Eng. , vol.75 , pp. 201
- Yen, T.-F.¹ Chiu, C.M.² Chiu, K.F.³

30
- 71049195932
- 0040-6090.
- S. Mathew, R. Nagarajan, L. K. Bera, F. H. Hua, D. A. Yan, and N. Balasubramanian, Thin Solid Films 0040-6090 63, 462 (2004).
- (2004) Thin Solid Films , vol.63 , pp. 462
- Mathew, S.¹ Nagarajan, R.² Bera, L.K.³ Hua, F.H.⁴ Yan, D.A.⁵ Balasubramanian, N.⁶

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