SCOPUS 정보 검색 플랫폼

Volumn 159, Issue 2, 2012, Pages

Sputter-deposited La 2O 3 on p-GaAs for gate dielectric applications

(12) Das, T a Mahata, C a Maiti, C K a Dalapati, G K b Chia, C K b Chi, D Z b Chiam, S Y b Seng, H L b Tan, C C b Hui, H K b Sutradhar, G c Bose, P K c

a INDIAN INSTITUTE OF TECHNOLOGY (India)

b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

c JADAVPUR UNIVERSITY (India)

Author keywords

[No Author keywords available]

Indexed keywords

AS INTERFACES; CONSTANT VOLTAGE; DEVICE CHARACTERISTICS; EQUIVALENT OXIDE THICKNESS; FLAT-BAND VOLTAGE; FREQUENCY DISPERSION; GATE DIELECTRIC APPLICATIONS; GATE LEAKAGE CURRENT DENSITY; GATE STACKS; HYSTERESIS VOLTAGE; INTERFACE PASSIVATION; METAL OXIDE SEMICONDUCTOR; NATIVE OXIDES; POST DEPOSITION ANNEALING; THERMALLY STABLE; ULTRA-THIN; X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES;

DIELECTRIC DEVICES; GALLIUM ARSENIDE; GATE DIELECTRICS; INTERFACES (MATERIALS); INTERNET PROTOCOLS; LANTHANUM OXIDES; LEAKAGE CURRENTS; MOS CAPACITORS; SEMICONDUCTING GALLIUM; SILICON COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRIC PROPERTIES;

EID: 84855328677 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/2.072202jes Document Type: Article

Times cited : (28)

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