Improvement of interfacial properties with interfacial layer in La2O3/Ge structure

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2336-2339

  Song, J ^a   Kakushima, K ^a   Ahmet, P ^a   Tsutsui, K ^a   Sugii, N ^a   Hattori, T ^a   Iwai, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Germanate; Germanium; High k; Interface trap density; La2O3; Lanthanum oxide; PDA

Indexed keywords

ANNEALING; GERMANIUM; GROWTH (MATERIALS); INTERFACES (MATERIALS);

INTERFACE TRAP DENSITY; LANTHANUM OXIDE;

LANTHANUM COMPOUNDS;

EID: 34248666115     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.107     Document Type: Article

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