Chemical bonding states and energy band gap of SiO2-incorporated La2O3 films on n-GaAs (001)

Thin Solid Films

Volumn 494, Issue 1-2, 2006, Pages 311-314

  Yang, Jun Kyu ^a   Kim, Woo Sik ^b   Park, Hyung Ho ^a  

^a Yonsei University   (South Korea)

^b Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Band gap; Band offset; GaAs; La silicate; MOS

Indexed keywords

CHEMICAL BONDS; ELECTRON BEAMS; EVAPORATION;

BAND STRUCTURES; CHEMICAL BONDING STATES; VALENCE BANDS;

ENERGY GAP;

EID: 27844517421     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.159     Document Type: Conference Paper

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