Interfacial and electrical characterization of atomic-layer-deposited HfO2 gate dielectric on high mobility epitaxial GaAs/Ge channel substrates

Journal of the Electrochemical Society

Volumn 157, Issue 8, 2010, Pages

  Dalapati, G K ^a   Kumar, M K ^a   Chia, C K ^a   Gao, H ^a   Wang, B Z ^a   Wong, A S W ^a   Kumar, A ^b   Chiam, S Y ^a   Pan, J S ^a   Chi, D Z ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; ELECTRICAL CHARACTERIZATION; ELECTRICAL PROPERTY; EPITAXIAL GAAS; EQUIVALENT OXIDE THICKNESS; FLAT BAND; GAAS; GAAS SUBSTRATES; GAAS SURFACES; GAAS/GE; GATE STACKS; HIGH MOBILITY; HIGH-QUALITY GATE DIELECTRICS; HYSTERESIS VOLTAGE; INTERFACIAL LAYER; INTERFACIAL-LAYER THICKNESS; LOW FREQUENCY; NANOSCALE FEATURES; POST DEPOSITION ANNEALING;

ATOMIC LAYER DEPOSITION; ATOMS; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; GALLIUM ARSENIDE; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; HAFNIUM COMPOUNDS; LOGIC GATES; OXIDE FILMS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM ALLOYS;

EID: 77954756665     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3453935     Document Type: Article

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