Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2324-2327

  Mavrou, G ^a   Galata, S F ^a,b   Sotiropoulos, A ^a   Tsipas, P ^a   Panayiotatos, Y ^a   Dimoulas, A ^a   Evangelou, E K ^b   Seo, J W ^c   Dieker, Ch ^c  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^b UNIVERSITY OF IOANNINA   (Greece)

^c EPFL   (Switzerland)

Author keywords

Germanium; Passivation; Rare earth oxides

Indexed keywords

DEPOSITION; FILM THICKNESS; GATE DIELECTRICS; HYSTERESIS; RARE EARTH COMPOUNDS; SEMICONDUCTING GERMANIUM; TRANSMISSION ELECTRON MICROSCOPY;

GATE OXIDE; INTERFACIAL LAYER; RARE EARTH OXIDES; REACTION LAYER;

MISFET DEVICES;

EID: 34248652709     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.036     Document Type: Article

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