Role of AlxGa1-xAs buffer layer in heterogeneous integration of GaAs/Ge

Journal of Applied Physics

Volumn 109, Issue 6, 2011, Pages

  Chia, C K ^a   Dalapati, G K ^a   Chai, Y ^a   Lu, S L ^b   He, W ^b   Dong, J R ^b   Seng, D H L ^a   Hui, H K ^a   Wong, A S W ^a   Lau, A J Y ^a   Cheng, Y B ^a   Chi, D Z ^a   Zhu, Z ^c   Yeo, Y C ^c   Xu, Z ^d   Yoon, S F ^d  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AL CONTENT; AS INTERFACES; COMPRESSIVE STRAIN; GAAS; GAAS/GE; HETERO INTERFACES; HETEROGENEOUS INTEGRATION; INTER-DIFFUSION; LATTICE-MATCHED; METALORGANIC CHEMICAL VAPOR DEPOSITION; OUT-DIFFUSION; PL MEASUREMENTS;

BUFFER LAYERS; GALLIUM; GERMANIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; OPTICAL PROPERTIES; TENSILE STRAIN;

ALUMINUM;

EID: 79953650787     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3561489     Document Type: Article

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