Influence of nitrogen incorporation in ultrathin SiO2 on the structure and electronic states of the SiO2/Si(100) interface

Applied Surface Science

Volumn 159, Issue , 2000, Pages 75-82

  Miyazaki, S ^a   Tamura, T ^a   Ogasawara, M ^a   Itokawa, H ^a   Murakami, H ^a   Hirose, M ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPRESSIVE STRESS; DIELECTRIC LOSSES; ELECTRONIC STRUCTURE; INFRARED RADIATION; INTERFACES (MATERIALS); MOS DEVICES; NITROGEN OXIDES; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SEMICONDUCTING SILICON COMPOUNDS; ULTRATHIN FILMS;

ENERGY LOSS SPECTRA; OXYNITRIDES; VALANCE BAND SPECTRA;

SEMICONDUCTING FILMS;

EID: 0034207156     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00078-7     Document Type: Article

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