Electrical characteristics of metal-oxide-semiconductor capacitors on p -GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric

Applied Physics Letters

Volumn 93, Issue 19, 2008, Pages

  Suri, Rahul ^a   Lee, Bongmook ^a   Lichtenwalner, Daniel J ^a   Biswas, Nivedita ^a   Misra, Veena ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMIC PHYSICS; ATOMS; CAPACITANCE; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; GALLIUM ALLOYS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HAND HELD COMPUTERS; MOS CAPACITORS; MOSFET DEVICES; PASSIVATION; PERSONAL DIGITAL ASSISTANTS; PHOTOELECTRON SPECTROSCOPY; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM; SULFUR; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYERS; CAPACITANCE VOLTAGES; DIELECTRIC INTERFACES; ELECTRICAL CHARACTERISTICS; EQUIVALENT OXIDE THICKNESSES; FREQUENCY DISPERSIONS; GATE LEAKAGES; INTERFACE PASSIVATION LAYERS; LAYER THICKNESSES; MEASUREMENT TECHNIQUES; POSTDEPOSITION ANNEAL; SEMICONDUCTOR CAPACITORS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

GATE DIELECTRICS;

EID: 56249098317     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3007978     Document Type: Article

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