Growth and characteristics of La 2 O 3 gate dielectric prepared by low pressure metalorganic chemical vapor deposition

Applied Surface Science

Volumn 233, Issue 1-4, 2004, Pages 91-98

  Cheng, Jin Bo ^a   Li, Ai Dong ^a   Shao, Qi Yue ^a   Ling, Hui Qin ^a   Wu, Di ^a   Wang, Yuan ^a   Bao, Yong Jun ^a   Wang, Mu ^a   Liu, Zhi Guo ^a   Ming, Nai Ben ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Gate dielectric; High k; La 2 O 3 films; MOCVD

Indexed keywords

ELECTRIC PROPERTIES; GATES (TRANSISTOR); LANTHANUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXYGEN; PERMITTIVITY; SILICON; SURFACE CHEMISTRY; ULTRATHIN FILMS;

CHEMICAL INSTABILITY; GATE DIELECTRIC; HIGH K; LA2O3 FILMS;

DIELECTRIC FILMS;

EID: 2942672871     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.232     Document Type: Article

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