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Volumn 106, Issue 11, 2009, Pages

H plasma cleaning and a-Si passivation of GaAs for surface channel device applications

(9) Marchiori, C a Webb, D J a Rossel, C a Richter, M a Sousa, M a Gerl, C a Germann, R a Andersson, C a Fompeyrine, J a

a IBM RESEARCH ZURICH (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CAPACITANCE VOLTAGE MEASUREMENTS; CONDUCTANCE TECHNIQUES; CONDUCTING CHANNELS; GA-O BONDS; GAAS; GAAS SURFACES; GAAS(001); GATE OXIDE; GATE STACKS; LOW TEMPERATURES; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; MOLECULAR BEAM DEPOSITION; PASSIVATING LAYER; PLASMA CLEANING; REMOTE RF; SURFACE CHANNEL DEVICES; SURFACE PASSIVATION; VALENCE-BAND MAXIMUMS;

AMORPHOUS SILICON; CAPACITANCE; CAPACITORS; CHEMICAL MODIFICATION; ENERGY GAP; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; HAFNIUM COMPOUNDS; METAL CLEANING; MOS CAPACITORS; MOS DEVICES; PASSIVATION; PLASMA DEPOSITION; SEMICONDUCTING GALLIUM; SILICON; SMELTING;

SURFACE CLEANING;

EID: 72449152204 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3260251 Document Type: Article

Times cited : (48)

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