55% PAE and high power Ka-band GaN HEMTs with linearized transconductance via n+ GaN source contact ledge

IEEE Electron Device Letters

Volumn 29, Issue 8, 2008, Pages 834-837

  Moon, J S ^a   Wong, D ^a   Hu, M ^a   Hashimoto, P ^a   Antcliffe, M ^a   McGuire, C ^a   Micovic, M ^a   Willadson, P ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

Gallium nitride; High electron mobility transistor (HEMT); Ka band; Microwave devices; Millimeter wave power FETs; Power added efficiency (PAE)

Indexed keywords

GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; OPTICAL DESIGN; SEMICONDUCTING GALLIUM; TRANSCONDUCTANCE;

ASSOCIATED GAIN; CHANNEL RESISTANCE; CW OUTPUT POWER; FIELD-PLATED GAN HEMTS; GAN HEMTS; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HIGH POWERS; KA-BAND; LINEARIZED TRANSCONDUCTANCE; MAXIMUM STABLE GAIN; MICROWAVE DEVICES; MILLIMETER WAVE POWER FETS; OUTPUT POWER DENSITY; PEAK EXTRINSIC TRANSCONDUCTANCE; POWER-ADDED-EFFICIENCY (PAE); REFERENCE DEVICES; SOURCE CONTACT;

GALLIUM ALLOYS;

EID: 48649100868     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2000792     Document Type: Article

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