AlGaN/GaN heterostructure field-effect transistors on 4H-SiC substrates with current-gain cutoff frequency of 190 GHz

Applied Physics Express

Volumn 1, Issue 2, 2008, Pages

  Higashiwaki, Masataka ^a   Mimura, Takashi ^a,b   Matsui, Toshiaki ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CHEMICAL VAPOR DEPOSITION; CUTOFF FREQUENCY; DRAIN CURRENT; ELECTRIC RESISTANCE; GALLIUM; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; PASSIVATION; SILICON CARBIDE; SILICON NITRIDE; SUBSTRATES; TRANSISTORS;

ALGAN/GAN HETEROSTRUCTURE; APPLICATIONS.; BARRIER LAYERS; CAT-CVD; CATALYTIC CHEMICAL VAPOR DEPOSITIONS; GAIN CUTOFF FREQUENCIES; HIGH ELECTRON DENSITIES; HIGH MOBILITIES; MAXIMUM DRAIN CURRENT DENSITIES; MILLIMETER-WAVE; PASSIVATION LAYERS; PEAK EXTRINSIC TRANSCONDUCTANCES; SIC SUBSTRATES;

FIELD EFFECT TRANSISTORS;

EID: 54849240200     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.1.021103     Document Type: Article

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