AlGaN/GaN HEMT with 300-GHz fmax

IEEE Electron Device Letters

Volumn 31, Issue 3, 2010, Pages 195-197

  Chung, Jinwook W ^a   Hoke, William E ^b   Chumbes, Eduardo M ^b   Palacios, Tomás ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b RAYTHEON COMPANY   (United States)

Author keywords

AlGaN; GaN; Gate recess; High electron mobility transistor (HEMT); Maximum oscillation frequency (fmax); Recessed ohmic; Short channel effects; SiC substrate

Indexed keywords

ALGANGAN; GATE RECESS; MAXIMUM OSCILLATION FREQUENCY; SHORT-CHANNEL EFFECT; SIC SUBSTRATES;

CUTOFF FREQUENCY; ELECTRIC RESISTANCE; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; OHMIC CONTACTS; SCATTERING PARAMETERS; SILICON CARBIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77649179517     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2038935     Document Type: Article

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