AlN passivation over AlGaN/GaN HFETs for surface heat spreading

IEEE Transactions on Electron Devices

Volumn 57, Issue 5, 2010, Pages 980-985

  Tsurumi, Naohiro ^a   Ueno, Hiroaki ^a   Murata, Tomohiro ^a   Ishida, Hidetoshi ^a   Uemoto, Yasuhiro ^a   Ueda, Tetsuzo ^a   Inoue, Kaoru ^a   Tanaka, Tsuyoshi ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

AlGaN GaN HFETs; Current collapse; Polycrystalline AlNpassivation; Thermal resistance; Thermal spreading

Indexed keywords

ALGAN/GAN HFETS; CURRENT COLLAPSE; POLYCRYSTALLINE; THERMAL RESISTANCE; THERMAL SPREADING;

DRAIN CURRENT; ELECTRIC CURRENT MEASUREMENT; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HEAT RESISTANCE; HETEROJUNCTIONS; SILICON NITRIDE;

PASSIVATION;

EID: 77951622057     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2044675     Document Type: Article

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