High-performance integrated dual-gate AlGaN/GaN enhancement-mode transistor

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 990-992

  Lu, Bin ^a   Saadat, Omair Irfan ^a   Palacios, Tomás ^a  

^a USA   (United States)

Author keywords

AlGaN GaN; dual gate; enhancement mode (E mode); high electron mobility transistor (HEMT); power electronics

Indexed keywords

ALGAN/GAN; BREAKDOWN VOLTAGE; DUAL GATES; DUAL-GATE; DUAL-GATE STRUCTURE; E-MODE BEHAVIOR; ENHANCEMENT-MODE; GATE STRUCTURE; GATE TECHNOLOGY; HIGH BREAKDOWN VOLTAGE; HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT); HIGH-THRESHOLD VOLTAGES; HIGH-VOLTAGES; MAXIMUM DRAIN CURRENT; ON-RESISTANCE; SI SUBSTRATES; SPECIFIC-ON-RESISTANCE;

DRAIN CURRENT; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; POWER ELECTRONICS; THRESHOLD VOLTAGE; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77956178490     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2055825     Document Type: Article

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