Enhancement-mode AlN/GaN/AlGaN DHFET with 700-mS/mm gm and 112-GHz fT

IEEE Electron Device Letters

Volumn 31, Issue 10, 2010, Pages 1116-1118

  Corrion, A L ^a   Shinohara, K ^a   Regan, D ^a   Milosavljevic, I ^a   Hashimoto, P ^a   Willadsen, P J ^a   Schmitz, A ^a   Wheeler, D C ^a   Butler, C M ^a   Brown, D ^a   Burnham, S D ^a   Micovic, M ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

Current gain cutoff frequency fT; enhancement mode (E mode); GaN; heterojunction field effect transistor (HFET); high electron mobility transistor (HEMT)

Indexed keywords

ALN BARRIERS; DOUBLE-HETEROJUNCTION; ENHANCEMENT MODES; ENHANCEMENT-MODE; EXTRINSIC TRANSCONDUCTANCE; GAIN CUTOFF FREQUENCY; GAN; GAN HFET; GATE LENGTH; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HIGH FREQUENCY PERFORMANCE; MAXIMUM OSCILLATION FREQUENCY; MODE OPERATION; ON-RESISTANCE; PARASITIC RESISTANCES; RECESS ETCHING; SHEET CHARGE DENSITY; VERTICAL SCALING;

CUTOFF FREQUENCY; ELECTRON MOBILITY; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; OHMIC CONTACTS; SILICON NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77957572529     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2058845     Document Type: Article

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