DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: Performance and reliability issues

Microelectronics Reliability

Volumn 45, Issue 9-11, 2005, Pages 1585-1592

  Verzellesi, G ^a   Meneghesso, G ^b   Chini, A ^a   Zanoni, E ^b   Canali, C ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; HETEROJUNCTIONS; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE;

DISPERSION EFFECTS; TECHNOLOGICAL COUNTERACTIONS;

FIELD EFFECT TRANSISTORS;

EID: 24144456532     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.07.064     Document Type: Conference Paper

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