Investigation of the electronic properties of nitrogen vacancies in AlGaN

Journal of Applied Physics

Volumn 105, Issue 6, 2009, Pages

  Cao, X A ^a   Syed, A A ^a   Piao, H ^b  

^a West Virginia University   (United States)

^b GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AL CONTENTS; ALGAN; DEEP LEVELS; ELECTRICAL CHARACTERISTICS; MOLE FRACTIONS; NEAR-SURFACE REGIONS; NITROGEN VACANCIES; PROLONGED ANNEALING; RECTIFYING CHARACTERISTICS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SURFACE DECOMPOSITIONS; THERMAL PROCESSING; X-RAY PHOTOELECTRON SPECTROSCOPIES;

ALUMINUM; ANNEALING; DISTILLATION; ELECTRONIC PROPERTIES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; PLATINUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; VACANCIES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 63749088828     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3089239     Document Type: Article

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