Nonvolatile-Memory Characteristics of AlO--Implanted AI2O3

IEEE Electron Device Letters

Volumn 30, Issue 8, 2009, Pages 837-839

  Kim, Min Choul ^a   Kim, Sung ^b   Choi, Suk Ho ^a   Belay, Kidane ^b   Elliman, Rob G ^b   Russo, Salvy P ^c  

^a Kyung Hee University   (South Korea)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c RMIT UNIVERSITY   (Australia)

Author keywords

Al2O3; AlO ion implantation; Deep trap; Nonvolatile memory (NVM)

Indexed keywords

AL2O3; ALO- ION IMPLANTATION; CONDUCTION-BAND MINIMUM; DEEP TRAP; DIVACANCIES; FLUENCES; HIGH TEMPERATURE; NON-VOLATILE; NONVOLATILE-MEMORY (NVM); PHOTOCONDUCTIVITY SPECTRUM; PROGRAM/ERASE; RELATIVE CONCENTRATION; TRAP LEVELS;

ELECTRON MOBILITY; ION BOMBARDMENT; ION IMPLANTATION;

ALUMINUM;

EID: 68249151084     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2024440     Document Type: Article

References (14)

1. S. Lombardo, B. De Salvo, C. Gerardi, and T. Baron, "Silicon nanocrystal memories," Microelectron. Eng., vol. 72, no. 1-4, pp. 389-394, May 2004.
2. H. I. Hanafi, S. Tiwari, and I. Khan, "Fast and long retention-time nanocrystal memory," IEEE Trans. Electron Devices, vol. 43, no. 9, pp. 1553-1558, Sep. 1996.
3. S. K. Samanta, W. J. Yoo, G. Samudra, E. S. Tok, L. K. Bera, and N. Balasubramanian, "Tungsten nanocrystals embedded in high-κ materials for memory application," Appl. Phys. Lett., vol. 87, no. 11, p. 113 110, Sep. 2005.
4. Z. Liu, C. Lee, V. Narayanan, G. Pei, and E. C. Kan, "Metal nanocrystal memories - Part I: Device design and fabrication," IEEE Trans. Electron Devices, vol. 49, no. 9, pp. 1606-1613, Sep. 2002.
5. H. Silva, M. K. Kim, U. Avic, A. Kumar, and S. Tiwari, "Nonvolatile silicon memory at the nanoscale," MRS Bull., vol. 29, no. 11, pp. 845-851, Nov. 2004.
6. Y. N. Tan, W. K. Chim, W. K. Choi, M. S. Joo, T. H. Ng, and B. J. Cho, "High-k HfAlO charge trapping layer in SONOS-type non-volatile memory device for high speed operation," in IEDM Tech. Dig., 2004, pp. 889-892.
7. Y. Yang, A. Purwar, and M. H. White, "Reliability considerations in scaled SONOS nonvolatile memory devices," Solid State Electron., vol. 43, no. 11, pp. 2025-2032, Nov. 1999.
8. 3 film with an embedded Al-rich layer," Appl. Phys. Lett., vol. 87, no. 22, p. 223 110, Nov. 2005.
9. J. P. Biersack and L. G. Haggmark, "A Monte Carlo computer program for the transport of energetic ions in amorphous targets," Nucl. Instrum. Methods Phys. Res. B, Beam Interact. Mater. At., vol. 174, no. 1/2, pp. 257-269, Aug. 1980.
10. S. Kim, D. K. Lee, S. H. Hong, S. H. Eom, H. T. Oh, S.-H. Choi, H. N. Hwang, and C. C. Hwang, "High-efficient ultraviolet emission in phonon-reduced ZnO films: The role of germanium," J. Appl. Phys., vol. 103, no. 2, p. 023 514, Jan. 2008.
11. 3 interface," Phys. Stat. Sol. A, vol. 159, no. 2, pp. 425-437, Feb. 1997.
12. R. Dovesi, B. Civalleri, R. Orlando, C. Roetti, and V. Saunders, "Ab initio quantum simulation in solid state chemistry," Rev. Comput. Chem., vol. 21, pp. 1-125, 2005.
13. 3, with comparison to alon and AIN," J. Amer. Ceram. Soc., vol. 73, no. 3, pp. 477-489, 1990.
14. 2 and N-assisted Ni confinement for nonvolatile memory application," Appl, Phys. Lett., vol. 86, no. 1, p. 013 107, Jan. 2005.