SCOPUS 정보 검색 플랫폼

Volumn 98, Issue 11, 2011, Pages

Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/ Al2 O3 passivation

(5) Liu, Z H a Ng, G I a Zhou, H a Arulkumaran, S a Maung, Y K T a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; ATOMIC LAYER DEPOSITED; BI-LAYER; CHEMICAL VAPOR DEPOSITED; GAN BUFFER LAYERS; GAN HEMTS; PULSE MEASUREMENTS; SURFACE CONDUCTION; SURFACE LEAKAGE CURRENTS; SURFACE STATE; SURFACE TRAPPING; TRAPPING EFFECTS; VARIABLE RANGE HOPPING;

ALUMINUM; ELECTRON MOBILITY; GALLIUM NITRIDE; LEAKAGE CURRENTS; PASSIVATION; SILICON NITRIDE; TWO DIMENSIONAL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79952926445 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3567927 Document Type: Article

Times cited : (104)

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