V-Gate GaN HEMTs for X-Band power applications

IEEE Electron Device Letters

Volumn 29, Issue 9, 2008, Pages 974-976

  Chu, Rongming ^a   Shen, Likun ^a   Fichtenbaum, Nicholas ^a   Brown, David ^a   Chen, Zhen ^a   Keller, Stacia ^a   DenBaars, Steven P ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

GaN; High electron mobility transistors (HEMTs); Power amplifier; V gate; X band

Indexed keywords

ELECTRON MOBILITY; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM;

GAN; HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS); POWER AMPLIFIER; V-GATE; X-BAND;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 50649125871     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2001639     Document Type: Article

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