Influence of the structural and compositional properties of PECVD silicon nitride layers on the passivation of AlGaN/GaN HEMTs

ECS Transactions

Volumn 16, Issue 7, 2009, Pages 181-191

  Karouta, F ^a   Kramer M C J C M ^a   Kwaspen, J J M ^a   Grzegorczyk, A ^b   Hageman, P ^b   Hoex, B ^a   Kessels, W M M ^a   Klootwijk, J ^c   Timmering, E ^c   Smit, M K ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; AMMONIA; ENERGY GAP; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; LEAKAGE CURRENTS; METALLIZING; NITRIDES; OHMIC CONTACTS; PASSIVATION; REFRACTIVE INDEX; SAPPHIRE; SILANES; SILICON NITRIDE;

COMPOSITIONAL PROPERTIES; DEPOSITION TEMPERATURES; DRAIN LEAKAGE CURRENT; EXTINCTION COEFFICIENTS; PECVD SILICON NITRIDE; PULSED CURRENT VOLTAGE; SAPPHIRE SUBSTRATES; SUBSTANTIAL REDUCTION;

WIDE BAND GAP SEMICONDUCTORS;

EID: 63849233300     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2983174     Document Type: Conference Paper

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