Gate-recessed AlGaN/GaN based enhancement-mode high electron mobility transistors for high frequency operation

Japanese Journal of Applied Physics

Volumn 48, Issue 4 PART 2, 2009, Pages

  Maroldt, Stephan ^a   Haupt, Christian ^a   Pletschen, Wilfried ^a   Müller, Stefan ^a   Quay, Rüdiger ^a   Ambacher, Oliver ^a   Schippel, Christian ^b   Schwierz, Frank ^b  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ENHANCEMENT-MODE; ENHANCEMENT-MODE HIGH ELECTRON MOBILITY TRANSISTORS; HIGH FREQUENCY OPERATION; LARGE-SIGNALS; LOW DAMAGES; OUTPUT POWER DENSITY; POWER MEASUREMENT; RECESS ETCHING;

CHLORINE; ELECTRON MOBILITY; GALLIUM NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 70549088146     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.04C083     Document Type: Article

References (14)

1. M. Higashiwaki, T. Mimura, and T. Matsui: Appl. Phys. Express 1 (2008) 021103.
2. Y. Uemoto, D. Shibata, M. Yanagihara, H. Ishida, H. Matsuo, S. Nagai, N. Batta, M. Li, T. Ueda, T. Tanaka, and D. Ueda: IEDM Tech. Dig., 2007, p. 861.
3. E. Mitani, M. Aojima, and S. Sano: Proc. EuMIC, 2007, p. 217.
4. V. Kumar, A. Kuliev, T. Tanaka, Y. Otoki, and I. Adesida: Electron. Lett. 39 (2003) 1758.
5. Y. Cai, Y. Zhou, K. M. Lau, and K. J. Chen: IEEE Trans. Electron Devices 53 (2006) 2207.
6. J. Liu, Y. Zhou, J. Zhu, Y. Cai, K. M. Lau, and K. J. Chen: IEEE Trans. Electron Devices 54 (2007) 2.
7. M. Higashiwaki, T. Mimura, and T. Matsui: IEEE Trans. Electron Devices 54 (2007) 1566.
8. T. Palacios, C.-S. Suh, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra: IEEE Electron Device Lett. 27 (2006) 428.
9. T. Mizutani, M. Ito, S. Kishimoto, and F. Nakamura: IEEE Electron Device Lett. 28 (2007) 549.
10. T. Oka and T. Nozawa: IEEE Electron Device Lett. 29 (2008) 668.
11. W. B. Lanford, T. Tanaka, Y. Otoki, and I. Adesida: Electron. Lett. 41 (2005) 449.
12. F. Schwierz and J. J. Liou: Solid-State Electron. 51 (2007) 1079.
13. M. Micovic, P. Hashimoto, M. Hu, I. Milosavljevic, J. Duvall, P. J. Willadsen, W.-S. Wong, A. M. Conway, A. Kurdoghlian, P. W. Deelman, J.-S. Moon, A. Schmitz, and M. J. Delaney: IEDM Tech. Dig., 2004, p. 807.
14. M. Kuraguchi, Y. Takada, T. Suzuki, M. Hirose, K. Tsuda, W. Sait, Y. Saito, and I. Omura: Phys. Status Solidi A 204 (2007) 2010.