Development of a versatile physics-based finite-element model of an AlGaN/GaN HEMT capable of accommodating process and epitaxy variations and calibrated using multiple DC parameters

IEEE Transactions on Electron Devices

Volumn 58, Issue 4, 2011, Pages 1091-1095

  Heller, Eric R ^a   Vetury, Rama ^b   Green, Daniel S ^c  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b RF MICRO DEVICES   (United States)

^c OFFICE OF NAVAL RESEARCH   (United States)

Author keywords

Device model; field effect transistor (FET); GaN; GaN AlGaN; high electron mobility transistor (HEMT); model calibration; model characterization; modulation doped field effect transistor (MODFET)

Indexed keywords

DEVICE MODELS; FIELD-EFFECT TRANSISTOR (FET); GAN; GAN/ALGAN; HIGH-ELECTRON MOBILITY TRANSISTOR (HEMT); MODEL CALIBRATION; MODULATION-DOPED FIELD EFFECT TRANSISTOR (MODFET);

CALIBRATION; DC POWER TRANSMISSION; ELECTRON ABSORPTION; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; MESFET DEVICES; MODFETS; TRANSMISSION ELECTRON MICROSCOPY;

FINITE ELEMENT METHOD;

EID: 79953125408     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2107913     Document Type: Article

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