Performance of AlGaN/GaN high-electron mobility transistors with AlSiN passivation

IEEE Transactions on Electron Devices

Volumn 58, Issue 1, 2011, Pages 87-94

  Harvard, Ekaterina ^a   Brown, Richard ^a   Shealy, James R ^a  

^a Cornell University   (United States)

Author keywords

GaN; microwave power FETs; MODFETs; passivation

Indexed keywords

ALGAN/GAN; DRAIN BIAS; GAN; LARGE-SIGNAL PERFORMANCE; LARGE-SIGNALS; LOAD PULL; MICROWAVE POWER FETS; POWER-ADDED EFFICIENCY; SECOND-HARMONIC; STATE-OF-THE-ART DEVICES;

ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; MESFET DEVICES; MICROWAVE GENERATION; MICROWAVE POWER TRANSMISSION; MODFETS; SILICON NITRIDE;

PASSIVATION;

EID: 78650914749     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2084370     Document Type: Article

References (23)

1. S. Sheppard, K. Doverspike, W. Pribble, S. Allen, J. Palmour, L. Kehias, and T. Jenkins, "High-power microwave GaN/AlGaN HEMTs on semiinsulating silicon carbide substrates," IEEE Electron Device Lett., vol. 20, no. 4, pp. 161-163, Apr. 1999.
2. G. Ellis, J.-S. Moon, D. Wong, M. Micovic, A. Kurdoghlian, P. Hashimoto, and M. Hu, "Wideband AlGaN/GaN HEMT MMIC lownoise amplifier," in Proc. IEEE MTT-S Int. Microw. Symp. Exhib., Jun. 2004, vol. 1, pp. 153-156.
3. H. Xu, C. Sanabria, A. Chini, S. Keller, U. Mishra, and R. York, "A C-band high-dynamic range GaN HEMT low-noise amplifier," IEEE Microw. Wireless Compon. Lett., vol. 14, no. 6, pp. 262-264, Jun. 2004.
4. D. Krausse, R. Quay, R. Kiefer, A. Tessmann, H. Massler, A. Leuther, T. Merkle, S. Müller, C. Schöwrer, M. Mikulla, M. Schlechtweg, and G. Weimann, "Robust GaN HEMT low-noise amplifier MMICs for X-band applications," in Proc. 12th GAAS, 2004, pp. 71-74.
5. Y.-F. Wu, A. Saxler, M. Moore, R. Smith, S. Sheppard, P. Chavarkar, T. Wisleder, U. Mishra, and P. Parikh, "30-W/mm GaN HEMTs by field plate optimization," IEEE Electron Device Lett., vol. 25, no. 3, pp. 117- 119, Mar. 2004.
6. R. Thompson, T. Prunty, V. Kaper, and J. Shealy, "Performance of the AlGaN HEMT structure with a gate extension," IEEE Trans. Electron Devices, vol. 51, no. 2, pp. 292-295, Feb. 2004.
7. T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. DenBaars, J. Speck, and U. Mishra, "High-power AlGaN/GaN HEMTs for Ka-band applications," IEEE Electron Device Lett., vol. 26, no. 11, pp. 781-783, Nov. 2005.
8. M. Higashiwaki, T. Matsui, and T. Mimura, "AlGaN/GaN MIS-HFETs with fT of 163 GHz using Cat-CVD SiN gate-insulating and passivation layers," IEEE Electron Device Lett., vol. 27, no. 1, pp. 16-18, Jan. 2006.
9. P. Saunier,W. Kopp, H. Tserng, Y. Kao, and D. Heston, "A heterostructure FET with 75.8-percent power-added efficiency at 10 GHz," in Proc. IEEE MTT-S Int. Microw. Symp. Exhib., Jun. 1992, vol. 2, pp. 635-638.
10. B. Green, K. Chu, E. Chumbes, J. Smart, J. Shealy, and L. Eastman, "The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs," IEEE Electron Device Lett., vol. 21, no. 6, pp. 268-270, Jun. 2000.
11. J. Shealy, J. Wang, and R. Brown, "Methodology for small-signal model extraction of AlGaN HEMTs," IEEE Trans. Electron Devices, vol. 55, no. 7, pp. 1603-1613, Jul. 2008.
12. D. Snider, "A theoretical analysis and experimental confirmation of the optimally loaded and overdriven RF power amplifier," IEEE Trans. Electron Devices, vol. ED-14, no. 12, pp. 851-857, Dec. 1967.
13. M. Khatibzadeh and H. Tserng, "Harmonic tuning of power FETs at X-band," in Proc. IEEE MTT-S Int. Microw. Symp. Exhib., May 1990, vol. 3, pp. 989-992.
14. S. Gao, P. Butterworth, S. Ooi, and A. Sambell, "High-efficiency power amplifier design including input harmonic termination," IEEE Microw. Wireless Compon. Lett., vol. 16, no. 2, pp. 81-83, Feb. 2006.
15. P. Berini, M. Desgagne, F. Ghannouchi, and R. Bosisio, "An experimental study of the effects of harmonic loading on microwave MESFET oscillators and amplifiers," IEEE Trans. Microw. Theory Tech., vol. 42, no. 6, pp. 943-950, Jun. 1994.
16. P. Colantonio, F. Giannini, R. Giofre, E. Limiti, A. Serino, M. Peroni, P. Romanini, and C. Proietti, "A C-band high-efficiency second-harmonictuned hybrid power amplifier in GaN technology," IEEE Trans. Microw. Theory Tech., vol. 54, no. 6, pp. 2713-2722, Jun. 2006.
17. R. K. Varanasi, C. P. Baylis, L. P. Dunleavy, and W. Clausen, "Prediction of harmonic tuning performance in pHEMTs," in Proc. IEEE Annu. Conf. WAMICON, 2005, pp. 183-186.
18. S. Goto, T. Kunii, A. Ohta, A. Inoue, Y. Hosokawa, R. Hattori, and Y. Mitsui, "Effect of bias condition and input harmonic termination on high-efficiency inverse class-F amplifiers," in Proc. 31st Eur. Microw. Conf., Oct. 2001, pp. 1-4.
19. Y. Chung, C. Hang, S. Cai, Y. Qian, C. Wen, K. Wang, and T. Itoh, "AlGaN/GaN HFET power amplifier integrated with microstrip antenna for RF front-end applications," IEEE Trans. Microw. Theory Tech., vol. 51, no. 2, pp. 653-659, Feb. 2003.
20. S. LeSage, J. Detra, and J. Beyer, "Optimizing the power-added efficiency of a class-B GaAs FET amplifier," in Proc. IEEE MTT-S Int. Microw. Symp. Exhib., May 1988, vol. 1, pp. 339-342.
21. Cascade Microtech Impedance Standard Substrates 101-190. [Online]. Available: www.cascademicrotech.com/go/engineeringproducts-division/product- portfolio/accessories/impedance-substrate
22. B. Hughes and P. Tasker, "Bias dependence of the MODFET intrinsic model elements values at microwave frequencies," IEEE Trans. Electron Devices, vol. 36, no. 10, pp. 2267-2273, Oct. 1989.
23. R. Trew, Y. Liu, L. Bilbro,W. Kuang, R. Vetury, and J. Shealy, "Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs," IEEE Trans. Microw. Theory Tech., vol. 54, no. 5, pp. 2061-2067, May 2006.