Normally-off operation of recessed-gate AlGaN/GaN HFETs for high power applications

Electrochemical and Solid-State Letters

Volumn 14, Issue 5, 2011, Pages

  Lim, Wantae ^a   Jeong, Jae Hyun ^a   Lee, Heon Bok ^a   Lee, Jae Hoon ^a   Hur, Seung Bae ^a   Ryu, Jong Kyu ^a   Kim, Ki Se ^a   Kim, Tae Hyung ^a   Song, Sang Yeob ^a   Hur, Won Goo ^a   Kim, Sung Tae ^a   Pearton, S J ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HFETS; BREAKDOWN VOLTAGE; DEVICE PARAMETERS; ELECTRICAL PROPERTY; ELECTRONICS APPLICATIONS; FIELD-EFFECT MOBILITIES; GATE REGION; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; HIGH CURRENT DENSITIES; HIGH POWER APPLICATIONS; METAL-INSULATOR-SEMICONDUCTORS; ON-OFF RATIO; ON-RESISTANCE; PASSIVATION LAYER; RECESS DEPTH; RECESS ETCHING; RECESSED GATE; STRONG CORRELATION; SUBTHRESHOLD SLOPE; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

DRAIN CURRENT; ELECTRIC PROPERTIES; ELECTRON GAS; GALLIUM NITRIDE; METAL INSULATOR BOUNDARIES; MIS DEVICES; PASSIVATION; POWER ELECTRONICS; SILICON COMPOUNDS; THRESHOLD VOLTAGE; TWO DIMENSIONAL ELECTRON GAS;

FIELD EFFECT TRANSISTORS;

EID: 79952495561     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3555069     Document Type: Article

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