-
2
-
-
31044455312
-
High dielectric constant gate oxides for metal oxide Si transistors
-
DOI 10.1088/0034-4885/69/2/R02, PII S0034488506721856
-
J. Robertson, Rep. Prog. Phys. RPPHAG 0034-4885 10.1088/0034-4885/69/2/ R02 69, 327 (2006). (Pubitemid 43121643)
-
(2006)
Reports on Progress in Physics
, vol.69
, Issue.2
, pp. 327-396
-
-
Robertson, J.1
-
3
-
-
59949098763
-
-
JVTBD9 0734-211X 10.1116/1.3072517
-
J. Robertson, J. Vac. Sci. Technol. B JVTBD9 0734-211X 10.1116/1.3072517 27, 277 (2009).
-
(2009)
J. Vac. Sci. Technol. B
, vol.27
, pp. 277
-
-
Robertson, J.1
-
4
-
-
0037115703
-
-
JAPIAU 0021-8979 10.1063/1.1521517
-
Y. C. Yeo, T. J. King, and C. Hu, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1521517 92, 7266 (2002).
-
(2002)
J. Appl. Phys.
, vol.92
, pp. 7266
-
-
Yeo, Y.C.1
King, T.J.2
Hu, C.3
-
5
-
-
34547277537
-
Oxygen vacancies in high dielectric constant oxide-semiconductor films
-
DOI 10.1103/PhysRevLett.98.196101
-
S. Guha and V. Narayanan, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.98.196101 98, 196101 (2007). (Pubitemid 47139496)
-
(2007)
Physical Review Letters
, vol.98
, Issue.19
, pp. 196101
-
-
Guha, S.1
Narayanan, V.2
-
6
-
-
63249094487
-
-
PRBMDO 1098-0121 10.1103/PhysRevB.79.125305
-
O. Sharia, K. Y. Tse, J. Robertson, and A. A. Demkov, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.79.125305 79, 125305 (2009).
-
(2009)
Phys. Rev. B
, vol.79
, pp. 125305
-
-
Sharia, O.1
Tse, K.Y.2
Robertson, J.3
Demkov, A.A.4
-
7
-
-
77957739365
-
-
JAPIAU 0021-8979 10.1063/1.3481453
-
C. Choi and J. C. Lee, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3481453 108, 064107 (2010).
-
(2010)
J. Appl. Phys.
, vol.108
, pp. 064107
-
-
Choi, C.1
Lee, J.C.2
-
8
-
-
67649467456
-
-
APPLAB 0003-6951 10.1063/1.3159830
-
Z. C. Yang, A. P. Huang, L. Yan, Z. S. Xiao, X. W. Zhang, P. K. Chu, and W. W. Wang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3159830 94, 252905 (2009).
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 252905
-
-
Yang, Z.C.1
Huang, A.P.2
Yan, L.3
Xiao, Z.S.4
Zhang, X.W.5
Chu, P.K.6
Wang, W.W.7
-
9
-
-
40949157023
-
-
PRBMDO 1098-0121 10.1103/PhysRevB.77.085326
-
O. Sharia, A. A. Demkov, G. Bersuker, and B. H. Lee, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.77.085326 77, 085326 (2008).
-
(2008)
Phys. Rev. B
, vol.77
, pp. 085326
-
-
Sharia, O.1
Demkov, A.A.2
Bersuker, G.3
Lee, B.H.4
-
10
-
-
40549096055
-
Dipole model explaining high-k /metal gate field effect transistor threshold voltage tuning
-
DOI 10.1063/1.2890056
-
P. D. Kirsch, P. Sivasubramani, J. Huang, C. D. Young, M. A. Quevedo-Lopez, H. C. Wen, H. Alshareef, K. Choi, C. S. Park, K. Freeman, M. M. Hussain, G. Bersuker, H. R. Harris, P. Majhi, R. Choi, P. Lysaght, B. H. Lee, H. H. Tseng, R. Jammy, T. S. Böscke, D. J. Lichtenwalner, J. S. Jur, and A. I. Kingon, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2890056 92, 092901 (2008). (Pubitemid 351357408)
-
(2008)
Applied Physics Letters
, vol.92
, Issue.9
, pp. 092901
-
-
Kirsch, P.D.1
Sivasubramani, P.2
Huang, J.3
Young, C.D.4
Quevedo-Lopez, M.A.5
Wen, H.C.6
Alshareef, H.7
Choi, K.8
Park, C.S.9
Freeman, K.10
Hussain, M.M.11
Bersuker, G.12
Harris, H.R.13
Majhi, P.14
Choi, R.15
Lysaght, P.16
Lee, B.H.17
Tseng, H.-H.18
Jammy, R.19
Boscke, T.S.20
Lichtenwalner, D.J.21
Jur, J.S.22
Kingon, A.I.23
more..
-
11
-
-
54049104368
-
-
JAPIAU 0021-8979 10.1063/1.2986158
-
K. Xiong, J. Robertson, G. Pourtois, J. Pétry, and M. Müller, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2986158 104, 074501 (2008).
-
(2008)
J. Appl. Phys.
, vol.104
, pp. 074501
-
-
Xiong, K.1
Robertson, J.2
Pourtois, G.3
Pétry, J.4
Müller, M.5
-
12
-
-
63549120723
-
-
APPLAB 0003-6951 10.1063/1.3103314
-
Y. Kita, S. Yoshida, T. Hosoi, T. Shimura, K. Shiraishi, Y. Nara, K. Yamada, and H. Watanabe, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3103314 94, 122905 (2009).
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 122905
-
-
Kita, Y.1
Yoshida, S.2
Hosoi, T.3
Shimura, T.4
Shiraishi, K.5
Nara, Y.6
Yamada, K.7
Watanabe, H.8
-
13
-
-
77954820517
-
-
PRBMDO 1098-0121 10.1103/PhysRevB.81.035325
-
K. Y. Tse, D. Liu, and J. Robertson, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.81.035325 81, 035325 (2010).
-
(2010)
Phys. Rev. B
, vol.81
, pp. 035325
-
-
Tse, K.Y.1
Liu, D.2
Robertson, J.3
-
14
-
-
3743067479
-
-
PHRVAO 0031-899X 10.1103/PhysRev.138.A1689
-
V. Heine, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.138.A1689 138, A1689 (1965).
-
(1965)
Phys. Rev.
, vol.138
, pp. 1689
-
-
Heine, V.1
-
15
-
-
36849123485
-
-
JAPIAU 0021-8979 10.1063/1.1702952
-
A. M. Cowley and S. M. Sze, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1702952 36, 3212 (1965).
-
(1965)
J. Appl. Phys.
, vol.36
, pp. 3212
-
-
Cowley, A.M.1
Sze, S.M.2
-
16
-
-
5844355552
-
-
PRLTAO 0031-9007 10.1103/PhysRevLett.58.1260
-
W. Mönch, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.58. 1260 58, 1260 (1987).
-
(1987)
Phys. Rev. Lett.
, vol.58
, pp. 1260
-
-
Mönch, W.1
-
17
-
-
36249014343
-
Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes
-
DOI 10.1016/j.mee.2007.05.006, PII S0167931707005461, Advanced Gate Stack Technology (ISAGST)
-
H. Wen, P. Majhi, K. Choi, C. Park, H. Alshareef, H. Rustyharris, H. Luan, H. Niimi, H. Park, and G. Bersuker, Microelectron. Eng. MIENEF 0167-9317 10.1016/j.mee.2007.05.006 85, 2 (2008). (Pubitemid 350123643)
-
(2008)
Microelectronic Engineering
, vol.85
, Issue.1
, pp. 2-8
-
-
Wen, H.-C.1
Majhi, P.2
Choi, K.3
Park, C.S.4
Alshareef, H.N.5
Rusty Harris, H.6
Luan, H.7
Niimi, H.8
Park, H.-B.9
Bersuker, G.10
Lysaght, P.S.11
Kwong, D.-L.12
Song, S.C.13
Lee, B.H.14
Jammy, R.15
-
18
-
-
34548273066
-
Control of schottky barrier heights on high-K gate dielectrics for future complementary metal-oxide semiconductor devices
-
DOI 10.1103/PhysRevLett.99.086805
-
K. Y. Tse and J. Robertson, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.99.086805 99, 086805 (2007). (Pubitemid 47331096)
-
(2007)
Physical Review Letters
, vol.99
, Issue.8
, pp. 086805
-
-
Tse, K.-Y.1
Robertson, J.2
-
19
-
-
77956578673
-
-
APPLAB 0003-6951 10.1063/1.3478446
-
M. Bosman, Y. Zhang, C. K. Cheng, X. Li, X. Wu, K. L. Pey, C. T. Lin, Y. W. Chen, S. H. Hsu, and C. H. Hsu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3478446 97, 103504 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 103504
-
-
Bosman, M.1
Zhang, Y.2
Cheng, C.K.3
Li, X.4
Wu, X.5
Pey, K.L.6
Lin, C.T.7
Chen, Y.W.8
Hsu, S.H.9
Hsu, C.H.10
-
20
-
-
22944435193
-
3 capping layer on pMOS
-
DOI 10.1109/LED.2005.851093
-
L. Hong-Jyh and M. I. Gardner, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2005.851093 26, 441 (2005). (Pubitemid 41046717)
-
(2005)
IEEE Electron Device Letters
, vol.26
, Issue.7
, pp. 441-444
-
-
Li, H.-J.1
Gardner, M.I.2
-
21
-
-
73849108382
-
-
JAPIAU 0021-8979 10.1063/1.3266006
-
E. J. Kim, E. Chagarov, J. l. Cagnon, Y. Yuan, A. C. Kummel, P. M. Asbeck, S. Stemmer, K. C. Saraswat, and P. C. McIntyre, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.3266006 106, 124508 (2009).
-
(2009)
J. Appl. Phys.
, vol.106
, pp. 124508
-
-
Kim, E.J.1
Chagarov, E.2
Cagnon, J.L.3
Yuan, Y.4
Kummel, A.C.5
Asbeck, P.M.6
Stemmer, S.7
Saraswat, K.C.8
McIntyre, P.C.9
-
22
-
-
33750015014
-
3 stacks for scaled-down memory devices: Effects of interfaces and thermal annealing
-
DOI 10.1063/1.2360197
-
M. Lisiansky, A. Heiman, M. Kovler, A. Fenigstein, Y. Roizin, I. Levin, A. Gladkikh, M. Oksman, R. Edrei, A. Hoffman, Y. Shnieder, and T. Claasen, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2360197 89, 153506 (2006). (Pubitemid 44570628)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.15
, pp. 153506
-
-
Lisiansky, M.1
Heiman, A.2
Kovler, M.3
Fenigstein, A.4
Roizin, Y.5
Levin, I.6
Gladkikh, A.7
Oksman, M.8
Edrei, R.9
Hoffman, A.10
Shnieder, Y.11
Claasen, T.12
-
23
-
-
77951546549
-
-
APPLAB 0003-6951 10.1063/1.3396189
-
J. Kwon and Y. J. Chabal, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3396189 96, 151907 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 151907
-
-
Kwon, J.1
Chabal, Y.J.2
-
24
-
-
24144438630
-
3 with TaN metal gate for suppressing backward-tunneling effect
-
DOI 10.1063/1.2010607, 073510
-
C. H. Lee, K. C. Park, and K. Kim, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2010607 87, 073510 (2005). (Pubitemid 41230684)
-
(2005)
Applied Physics Letters
, vol.87
, Issue.7
, pp. 1-3
-
-
Lee, C.-H.1
Park, K.-C.2
Kim, K.3
-
25
-
-
67649401723
-
-
EDLEDZ 0741-3106 10.1109/LED.2009.2019254
-
L. Guo-Qiang, Z. Chunxiang, J. Fu, K. Dim-Lee, and N. Singh, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2009.2019254 30, 662 (2009).
-
(2009)
IEEE Electron Device Lett.
, vol.30
, pp. 662
-
-
Guo-Qiang, L.1
Chunxiang, Z.2
Fu, J.3
Dim-Lee, K.4
Singh, N.5
-
26
-
-
67650491261
-
-
APPLAB 0003-6951 10.1063/1.3173820
-
Y. T. Chen, H. Zhao, J. H. Yum, Y. Wang, F. Xue, F. Zhou, and J. C. Lee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3173820 95, 013501 (2009).
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 013501
-
-
Chen, Y.T.1
Zhao, H.2
Yum, J.H.3
Wang, Y.4
Xue, F.5
Zhou, F.6
Lee, J.C.7
-
28
-
-
80455149304
-
-
IEEE, Washington DC
-
Y. Kamimuta, K. Iwamoto, Y. Nunoshige, A. Hirano, W. Mizubayashi, Y. Watanabe, S. Migita, A. Ogawa, H. Ota, T. Nabatame, and A. Toriumi, Tech. Digest IEDM (IEEE, Washington DC, 2007), p. 342.
-
(2007)
Tech. Digest IEDM
, pp. 342
-
-
Kamimuta, Y.1
Iwamoto, K.2
Nunoshige, Y.3
Hirano, A.4
Mizubayashi, W.5
Watanabe, Y.6
Migita, S.7
Ogawa, A.8
Ota, H.9
Nabatame, T.10
Toriumi, A.11
-
29
-
-
44949245167
-
-
IEEE, Kyoto, Japan
-
K. Iwamoto, A. Ogawa, Y. Kamimuta, Y. Watanabe, W. Mizubayashi, S. Migita, Y. Morita, M. Takahashi, H. Ito, H. Ota, T. Nabatame, and A. Toriumi, Symp. on VLSI Tech. Digest (IEEE, Kyoto, Japan, 2007), p. 70.
-
(2007)
Symp. on VLSI Tech. Digest
, pp. 70
-
-
Iwamoto, K.1
Ogawa, A.2
Kamimuta, Y.3
Watanabe, Y.4
Mizubayashi, W.5
Migita, S.6
Morita, Y.7
Takahashi, M.8
Ito, H.9
Ota, H.10
Nabatame, T.11
Toriumi, A.12
-
30
-
-
53349143963
-
-
APPLAB 0003-6951 10.1063/1.2993335
-
K. Choi, H. C. Wen, G. Bersuker, R. Harris, and B. H. Lee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2993335 93, 133506 (2008).
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 133506
-
-
Choi, K.1
Wen, H.C.2
Bersuker, G.3
Harris, R.4
Lee, B.H.5
-
31
-
-
71949122204
-
-
APPLAB 0003-6951 10.1063/1.3263719
-
B. E. Coss, W. Y. Loh, R. M. Wallace, J. Kim, P. Majhi, and R. Jammy, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3263719 95, 222105 (2009).
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 222105
-
-
Coss, B.E.1
Loh, W.Y.2
Wallace, R.M.3
Kim, J.4
Majhi, P.5
Jammy, R.6
-
32
-
-
80455149303
-
-
To simplify the analysis, the metallic component of Ta 4f was fitted with a symmetric peak. It should be noted that the metallic component has the lowest BE in the spectra. Therefore, the shift in this component is identical to the overall shift of the entire spectra. Using an asymmetric fit may diminish the small O 2s peak or change the ratio between the oxidized Ta 4f components. Such changes have no effect on the results and discussion in this work.
-
To simplify the analysis, the metallic component of Ta 4 f was fitted with a symmetric peak. It should be noted that the metallic component has the lowest BE in the spectra. Therefore, the shift in this component is identical to the overall shift of the entire spectra. Using an asymmetric fit may diminish the small O 2 s peak or change the ratio between the oxidized Ta 4 f components. Such changes have no effect on the results and discussion in this work.
-
-
-
-
34
-
-
58149336779
-
-
0368-2048 10.1016/j.elspec.2008.10.004
-
M. Khanuja, H. Sharma, B. Mehta, and S. Shivaprasad, J. Electron Spectrosc. 0368-2048 10.1016/j.elspec.2008.10.004 169, 41 (2009).
-
(2009)
J. Electron Spectrosc.
, vol.169
, pp. 41
-
-
Khanuja, M.1
Sharma, H.2
Mehta, B.3
Shivaprasad, S.4
-
35
-
-
80455137728
-
-
US Atomic Energy Commission Report BMI-1106
-
B. W. King, J. Schultz, E. A. Durbin, W. H. Duckworth, US Atomic Energy Commission Report BMI-1106, 1 (1956).
-
(1956)
, pp. 1
-
-
King, B.W.1
Schultz, J.2
Durbin, E.A.3
Duckworth, W.H.4
-
38
-
-
0344287239
-
Dielectric Multilayer Nanostructures of Tantalum and Aluminum Oxides
-
DOI 10.1134/1.1626763
-
Y. Ezhovskii and A. Klusevich, Phys. Solid State PSOSED 1063-7834 10.1134/1.1626763 45, 2203 (2003). (Pubitemid 37514390)
-
(2003)
Physics of the Solid State
, vol.45
, Issue.11
, pp. 2203-2208
-
-
Ezhovskii, Yu.K.1
Klusevich, A.I.2
-
39
-
-
4944257396
-
-
0021-8979 10.1063/1.1776636
-
H. Kim, P. C. McIntyre, C. On Chui, K. C. Saraswat, and S. Stemmer, J. Appl. Phys. 0021-8979 10.1063/1.1776636 96, 3467 (2004).
-
(2004)
J. Appl. Phys.
, vol.96
, pp. 3467
-
-
Kim, H.1
McIntyre, P.C.2
On Chui, C.3
Saraswat, K.C.4
Stemmer, S.5
-
40
-
-
33749478240
-
Chemical states and electrical properties of a high- k metal oxide/silicon interface with oxygen-gettering titanium-metal-overlayer
-
DOI 10.1063/1.2358834
-
K. I. Seo, D. I. Lee, P. Pianetta, H. Kim, K. C. Saraswat, and P. C. McIntyre, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2358834 89, 142912 (2006). (Pubitemid 44522248)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.14
, pp. 142912
-
-
Seo, K.-I.1
Lee, D.-I.2
Pianetta, P.3
Kim, H.4
Saraswat, K.C.5
McIntyre, P.C.6
-
42
-
-
46849119441
-
-
CHPLBC 0009-2614 10.1016/j.cplett.2008.06.016
-
W. Zheng, X. Li, S. Eustis, and K. Bowen, Chem. Phys. Lett. CHPLBC 0009-2614 10.1016/j.cplett.2008.06.016 460, 68 (2008).
-
(2008)
Chem. Phys. Lett.
, vol.460
, pp. 68
-
-
Zheng, W.1
Li, X.2
Eustis, S.3
Bowen, K.4
-
44
-
-
63049138175
-
-
APPLAB 0003-6951 10.1063/1.3097799
-
M. C. Kim, S. H. Hong, H. R. Kim, S. Kim, S.-H. Choi, R. G. Elliman, and S. P. Russo, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3097799 94, 112110 (2009).
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 112110
-
-
Kim, M.C.1
Hong, S.H.2
Kim, H.R.3
Kim, S.4
Choi, S.-H.5
Elliman, R.G.6
Russo, S.P.7
-
45
-
-
0942277730
-
-
APPLAB 0003-6951 10.1063/1.1635656
-
R. Jung, J. C. Lee, Y. W. So, T. W. Noh, S. J. Oh, J. C. Lee, and H. J. Shin, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1635656 83, 5226 (2003).
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 5226
-
-
Jung, R.1
Lee, J.C.2
So, Y.W.3
Noh, T.W.4
Oh, S.J.5
Lee, J.C.6
Shin, H.J.7
-
46
-
-
0003990723
-
-
John Wiley, Chichester, UK
-
J. C. Vickerman, Surface Analysis: The Principal Techniques (John Wiley, Chichester, UK, 1997), Chap. 3.5, p. 55-56.
-
(1997)
Surface Analysis: The Principal Techniques
, pp. 55-56
-
-
Vickerman, J.C.1
|