Nonvolatile memories using deep traps formed in Al2 O 3 by metal ion implantation

Applied Physics Letters

Volumn 94, Issue 11, 2009, Pages

  Kim, Min Choul ^a   Hong, Seung Hui ^a   Kim, Hye Ryong ^a   Kim, Sung ^a   Choi, Suk Ho ^a   Elliman, R G ^b   Russo, S P ^c  

^a Kyung Hee University   (South Korea)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c RMIT UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; DATA STORAGE EQUIPMENT; DOPING (ADDITIVES); ION BOMBARDMENT; ION IMPLANTATION; METAL IONS; METALS; NIOBIUM; PHOTOCURRENTS; SILICON COMPOUNDS; STRUCTURAL ANALYSIS; TRACE ANALYSIS;

BAND GAPS; DEEP ENERGY LEVELS; DEEP LEVELS; DEEP TRAPS; ENERGY LEVELS; METAL-DOPING; METAL-ION IMPLANTATIONS; NON-VOLATILE MEMORIES; PHOTOCURRENT SPECTROSCOPIES; TEST DEVICES; TEST STRUCTURES;

ALUMINUM;

EID: 63049138175     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3097799     Document Type: Article

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