Improved electrical characteristics of TaN/Al2O 3/In0.53Ga0.47 As metal-oxide-semiconductor field-effect transistors by fluorine incorporation

Applied Physics Letters

Volumn 95, Issue 1, 2009, Pages

  Chen, Yen Ting ^a   Zhao, Han ^a   Yum, Jung Hwan ^a   Wang, Yanzhen ^a   Xue, Fei ^a   Zhou, Fei ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CHANNEL MOBILITY; CONTROL DEVICE; DRIVE CURRENTS; ELECTRICAL CHARACTERISTIC; INTERFACE QUALITY; INTERFACE TRAP DENSITY; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; PLASMA TREATMENT; SUBTHRESHOLD SWING;

DIELECTRIC DEVICES; DIELECTRIC MATERIALS; FLUORINE; GATE DIELECTRICS; GATES (TRANSISTOR); ION BEAMS; MOSFET DEVICES; PASSIVATION; PLASMA APPLICATIONS; PLASMAS;

FIELD EFFECT TRANSISTORS;

EID: 67650491261     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3173820     Document Type: Article

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