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Applied Physics Letters

Volumn 94, Issue 25, 2009, Pages

Role of interface dipole in metal gate/high- k effective work function modulation by aluminum incorporation

(7) Yang, Z C a Huang, A P a Yan, L a Xiao, Z S a Zhang, X W b Chu, Paul K c Wang, W W d

a BEIHANG UNIVERSITY (China)

b INSTITUTE OF SEMICONDUCTORS (China)

c CITY UNIVERSITY OF HONG KONG (Hong Kong)

d INSTITUTE OF MICROELECTRONICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

AL INCORPORATION; ALUMINUM INCORPORATION; BAND ALIGNMENTS; EFFECTIVE WORK FUNCTION; ELECTROCHEMICAL POTENTIAL; ELECTROSTATIC POTENTIALS; EXPERIMENTAL DATA; INTERFACE DIPOLE; PMOS TECHNOLOGY;

ALUMINA; ALUMINUM; ELECTROSTATICS; WORK FUNCTION;

MODULATION;

EID: 67649467456 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3159830 Document Type: Article

Times cited : (22)

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