Bandgap states in transition-metal (Sc, Y, Zr, and Nb)-doped Al 2O3

Applied Physics Letters

Volumn 83, Issue 25, 2003, Pages 5226-5228

  Jung, Ranju ^a   Lee, Jae Cheol ^a   So, Ye Won ^b   Noh, Tae Won ^b   Oh, S J ^b   Lee, Jong Cheol ^b   Shin, Hyun Joon ^c  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Seoul National University   (South Korea)

^c Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; AMORPHOUS FILMS; BINDING ENERGY; DEGRADATION; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; ENERGY GAP; ETCHING; INTERFACES (MATERIALS); LEAKAGE CURRENTS; PERMITTIVITY; PRESSURE MEASUREMENT; PROBABILITY DENSITY FUNCTION; SURFACE PHENOMENA; X RAY PHOTOELECTRON SPECTROSCOPY; X RAY SPECTROSCOPY;

VALANCE BANDS; X-RAY ABSORPTION SPECTROSCOPY (XAS);

ALUMINUM COMPOUNDS;

EID: 0942277730     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1635656     Document Type: Article

References (8)

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4. M. Haverty, A. Kawamoto, K. Cho, and R. Dutton, Appl. Phys. Lett. 80, 2669 (2002).
5. This defect state can be seen in the systems that have two oxidation states, one with no d-electrons and the other with one d-electron. See, for example, Photoelectron Spectroscopy, 2nd ed, edited by S. Hufner (Springer, Berlin, 1995), p. 180; D. Morris, Y. Dou, J. Rebane, C. E. J. Mitchell, R. G. Egdell, D. S. L. Law, A. Vittadini, and M. Casarin, Phys. Rev. B 61, 13445 (2000).
6. This defect state can be seen in the systems that have two oxidation states, one with no d-electrons and the other with one d-electron. See, for example, Photoelectron Spectroscopy, 2nd ed, edited by S. Hufner (Springer, Berlin, 1995), p. 180; D. Morris, Y. Dou, J. Rebane, C. E. J. Mitchell, R. G. Egdell, D. S. L. Law, A. Vittadini, and M. Casarin, Phys. Rev. B 61, 13445 (2000).
7. A. Kotani and Y. Toyazawa, J. Phys. Soc. Jpn. 37, 912 (1974).
8. J. Robertson, Appl. Surf. Sci. 190, 2 (2002).