Mechanism of flatband voltage roll-off studied with Al2O 3 film deposited on terraced oxide

Applied Physics Letters

Volumn 93, Issue 13, 2008, Pages

  Choi, Kisik ^a   Wen, Huang Chun ^a   Bersuker, Gennadi ^a   Harris, Rusty ^a,b   Lee, Byoung Hun ^a,c  

^a SEMATECH   (United States)

^b MSE Department of GIST   (South Korea)

^c TEXAS A AND M UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SOIL CONSERVATION;

FLAT-BAND VOLTAGE;

MECHANISMS;

EID: 53349143963     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2993335     Document Type: Article

References (15)

1. K. Mistry, C. Allen, C. Auth, B. Beattie, D. Bergstrom, M. Bost, M. Brazier, M. Buehler, A. Cappellani, R. Chau, C. -H. Choi, G. Ding, K. Fischer, T. Ghani, R. Grover, W. Han, D. Hanken, M. Hattendorf, J. He, J. Hicks, R. Huessner, D. Ingerly, P. Jain, R. James, L. Jong, S. Joshi, C. Kenyon, K. Kuhn, K. Lee, H. Liu, J. Maiz, B. McIntyre, P. Moon, J. Neirynck, S. Pae, C. Parker, D. Parsons, C. Prasad, L. Pipes, M. Prince, P. Ranade, T. Reynolds, J. Sandford, L. Shifren, J. Sebastian, J. Seiple, D. Simon, S. Sivakumar, P. Smith, C. Thomas, T. Troeger, P. Vandervoorn, S. Williams, and K. Zawadzki, Tech. Dig.-Int. Electron Devices Meet. 2007, 247.
2. V. Narayanan, V. Paruchuri, N. Bojarczuk, B. Linder, B. Doris, Y. Kim, S. Zafar, J. Stathis, S. Brown, J. Arnold, M. Copel, M. Steen, E. Cartier, A. Callegari, P. Jamison, J. -P. Locquet, D. Lacey, Y. Wang, P. Batson, P. Ronsheim, R. Jammy, and M. Chudzik, Tech. Dig. VLSI Symp. 2007, 178.
3. J. K. Schaeffer, L. R. C. Fonseca, S. B. Samavedam, Y. Liang, P. J. Tobin, and B. E. White, Appl. Phys. Lett. 0003-6951 10.1063/1.1786656 85, 1826 (2004).
4. M. Kadoshima, Y. Sugita, K. Shiraishi, H. Watanabe, A. Ohta, S. Miyazaki, K. Nakajima, T. Chikyow, K. Yamada, T. Aminaka1, E. Kurosawa1, T. Matsuki, T. Aoyama, Y. Nara, and Y. Ohji, Tech. Dig. VLSI Symp. 2007, 66.
5. A. Toriumi, K. Kita, K. Tomida, Y. Zhao, J. Widiez, T. Nabatame, H. Ota, and M. Hirose, Tech. Dig.-Int. Electron Devices Meet. 2007, 53.
6. S. C. Song, Z. B. Zhang, M. M. Hussain, C. Huffman, J. Barnett, S. H. Bae, H. J. Li, P. Majhi, C. S. Park, B. S. Ju, H. K. Park, C. Y. Kang, R. Choi, P. Zeitzoff, H. H. Tseng, B. H. Lee, and R. Jammy, Tech. Dig. VLSI Symp. 2006, 13.
7. B. H. Lee, J. W. Oh, H. H. Tseng, R. Jammy, and H. Huff, Mater. Today 1369-7021 10.1016/S1369-7021(06)71495-X 9, 32 (2006).
8. S. C. Song, C. S. Park, J. Price, C. Burham, R. Choi, H. C. Wen, K. Choi, H. H. Tseng, B. H. Lee, and R. Jammy, Tech. Dig.-Int. Electron Devices Meet. 2007, 337.
9. G. Bersuker, C. S. Park, H. C. Wen, K. Choi, O. Sharia, A. Demkov, Proceedings of the ESSDERC, 2008 (unpublished).
10. B. P. Linder, V. Narayanan, V. K. Paruchuri, E. Cartier, and S. Kanakasabapathy, Proceedings of the SSDM, 2007 (unpublished), p. 16.
11. H. C. Wen, R. N. Choi, G. A. Brown, T. Boscke, K. Matthews, H. R. Harris, K. Choi, H. N. Alshareef, H. F. Luan, G. Bersuker, P. Majhi, D. L. Kwong, and B. H. Lee, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2006.876324 27, 984 (2006).
12. J. R. Hauser and K. Ahmed, Characterization and Metrology for ULSI Technology: 1998 International Conference, 1998 (unpublished), Vol. 449, pp. 235-239.
13. R. Jha, J. Lee, B. Chen, H. Lazar, J. Gurganus, N. Biswas, P. Majhi, G. Brown, and V. Misra, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 10.1109/IEDM.2004.1419137 2004, 295.
14. G. Brown, G. Smith, J. Saulters, K. Matthews, H. C. Wen, P. Majhi, and B. H. Lee, Proceedings of the IEEE SISC Conference, 2004 (unpublished).
15. H. Alshareef, H. Harris, H. Wen, C. Park, C. Huffman, K. Choi, H. Luan, P. Majhi, B. Lee, R. Jammy, D. Lichtenwalner, J. Jur, and A. Kingon, Tech. Dig. VLSI Symp. 2006, 7.