Re-examination of flat-band voltage shift for high-k MOS devices

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 70-71

  Iwamoto, K ^a   Ogawa, A ^a   Kamimuta, Y ^a   Watanabe, Y ^a   Mizubayashi, W ^a   Migita, S ^a   Morita, Y ^a   Takahashi, M ^a   Ito, H ^a   Ota, H ^a   Nabatame, T ^a   Toriumi, A ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

RHENIUM;

FLATBAND VOLTAGE SHIFTING; VLSI TECHNOLOGIES;

MOS DEVICES;

EID: 44949245167     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339731     Document Type: Conference Paper

References (3)

1. C. Hobbs et al., VLSI 2003, p. 9.
2. M. Kadoshima et al., VLSI 2006, p. 226.
3. Y. Yamamoto et al., SSDM 2006, p. 212.