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Applied Physics Letters

Volumn 97, Issue 10, 2010, Pages

The distribution of chemical elements in Al- or La-capped high-κ metal gate stacks

(10) Bosman, M a,b Zhang, Y a Cheng, C K a Li, X a,c Wu, X a,c Pey, K L c Lin, C T d Chen, Y W d Hsu, S H d Hsu, C H d

a INSTITUTE OF MICROELECTRONICS (Singapore)

b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

c NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

d UNITED MICROELECTRONICS CORPORATION (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL TECHNIQUES; CAPPING LAYER; CHEMICAL DISTRIBUTIONS; COLLECTION ANGLE; DIFFUSION PROFILES; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; IN-FIELD; INTERFACE LAYER; METAL GATE STACK; SPATIAL DISTRIBUTION; TRANSMISSION ELECTRON MICROSCOPE;

ALUMINUM; CHEMICAL ELEMENTS; CHEMICALS; ENERGY DISPERSIVE SPECTROSCOPY; FIELD EFFECT TRANSISTORS; LANTHANUM; SIZE DISTRIBUTION; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 77956578673 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3478446 Document Type: Article

Times cited : (28)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.