Generation and behavior of pure-edge threading misfit dislocations in InxGa1-xN/GaN multiple quantum wells

Journal of Applied Physics

Volumn 96, Issue 9, 2004, Pages 5267-5270

  Lu, W ^a,b   Li, D B ^c   Li, C R ^a   Zhang, Z ^d  

^a INSTITUTE OF PHYSICS   (China)

^b JILIN UNIVERSITY   (China)

^c INSTITUTE OF SEMICONDUCTORS   (China)

^d BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; VECTORS; X RAY DIFFRACTION;

BAND GAP ENERGY; DISLOCATIONS; PURE-EDGE THREADING; RALAXATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 9744246776     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1803633     Document Type: Article

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