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Journal of Electronic Materials

Volumn 30, Issue 10, 2001, Pages 1348-1352

Structural and optical investigation of InGaN/GaN multiple quantum well structures with various indium compositions

(4) Cho, Hyung Koun a Lee, Jeong Yong a Kim, Chi Sun b Yang, Gye Mo b

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b Chonbuk National University (South Korea)

Author keywords

Multiple quantum well (MQW); Structural quality; Transmission electron microscopy (TEM); V defect

Indexed keywords

BENDING (DEFORMATION); DEFECTS; DETERIORATION; GROWTH (MATERIALS); PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CAPPING LAYERS; MULTIPLE QUANTUM WELLS (MQW);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035485236 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-001-0123-y Document Type: Article

Times cited : (22)

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