Misfit dislocations in In-rich InGaN/GaN quantum well structures

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 7, 2006, Pages 1729-1732

  Costa, P M F J ^a   Datta, R ^a   Kappers, M J ^a   Vickers, M E ^a   Humphreys, C J ^a   Graham, D M ^b   Dawson, P ^b   Godfrey, M J ^b   Thrush, E J ^c   Mullins, J T ^c  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

^c Thomas Swan Scientific Equipment Limited   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONTRASTS; QUANTUM WELL STRUCTURES; STACKS; WELLWIDTH FLUCTUATIONS;

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; HETEROJUNCTIONS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33745027453     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200565219     Document Type: Article

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