Gallium nitride epitaxy on (0001) sapphire

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

Volumn 82, Issue 5, 2002, Pages 885-912

  Narayanan, V ^a   Lorenz, K ^a   Kim, Wook ^a   Mahajan, S ^a  

^a Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ASSOCIATION REACTIONS; ATOMIC FORCE MICROSCOPY; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; GRAIN BOUNDARIES; HIGH TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; POINT DEFECTS; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY;

MOSAIC STRUCTURE; NUCLEATION LAYERS; THREADING DISLOCATIONS;

GALLIUM NITRIDE;

EID: 0037139813     PISSN: 01418610     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418610110095698     Document Type: Article

References (40)

1. Akasaki, I., Amano, H., Koide, Y., Hiramatsu, K., and Sawaki, N., 1989, J. Cryst. Growth, 98, 209.
2. Amelinckx, S., 1982, Dislocations in Solids, Vol. 2, edited by F. R. N. Nabarro (Amsterdam: North-Holland), chapter 6, pp. 167-204.
3. Bassett, G. A., Menter, J. W., and Pashley, D. W., 1958, Proc. R. Soc. A, 246, 345-368.
4. Beam, E. A., Mahajan, S., and Bonner, W. A., 1990, Mater. Sci. Engng, B7, 83.
5. Cherns, D., Young, W. T., Steeds, J. W., Ponce, F. A., and Nakamura, S., 1997, J. Cryst. Growth, 178, 201.
6. Fini, P., Wu, X., Tarsa, E. J., Golan, Y., Srikant, V., Keller, S., Denbaars, S. P., and Speck, J. S., 1998, Jap. J. appl. Phys., 37, 4460.
7. Hersee, S. D., Ramer, J., Zheng, K., Kranenberg, C., Malloy, K., Banas, M., and Goorsky, M., 1995, J. Electron Mater., 24, 1519.
8. Hiramatsu, K., Itoh, S., Amano, H., Akasaki, I., Kuwano, N., Shiraishi, T., and Oki, K., 1991, J. Cryst. Growth, 115, 628.
9. Hirsch, P. B, Howie, A., Nicholson, R. B., Pashley, D. W., and Whelan, M. J., 1965, Electron Microscopy of Thin Crystals (London: Butterworths), p. 274.
10. Ichimura, M., and Narayan, J., 1995, Phil. Mag. A, 72, 281.
11. Ito, T., Masatomo, S., Takano, Y., Ohtsuka, K., and Fuke, S., 1999, Jap. J. appl. Phys., 38, 649.
12. Keller, S., Kapolnek, D., Keller, B. P., Wu, Y., Heying, B., Speck, J. S., Mishra, U. K., Denbaars, S. P., 1996, Jap. J. appl. Phys., 35, L285.
13. Kim, K. S., Oh, C. S., Lee, K. J., Yang, G. M., Hong, C. H., Lim, K. Y., and Lee, H. Y., 1999, J. appl. Phys., 85, 8441.
14. Koleske, D. D., Wickenden, A. E., Henry, R. L., Culbertson, J. C., and Twigg, M. E., 2001, J. Cryst. Growth, 223, 466.
15. Liliental-Weber, Z., and Cherns, D., 2001, J. appl. Phys., 89, 7833.
16. Lorenz, K., Gonsalves, M., Kim, W., Narayanan, V., and Mahajan, S., 2000, Appl. Phys. Lett., 77, 3391.
17. Mahajan, S., and Chin, G. Y., 1973, Acta mettall., 21, 1353.
18. Nakamura, S., 1991, Jap. J. appl. Phys., 30, L1705.
19. Nakamura, S., Senoh, M., Iwasa, N., Nagahama, S., Yamada, T., and Mukai, T., 1995, Jap. J. appl. Phys., 34, L1332.
20. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M., and Chocho, K., 1998, J. Cryst. Growth, 189-190, 820.
21. Narayanan, V., Lorenz, K., Gonsalves, M., Kim, W., and Mahajan, S., 2001a, Acta mater. (submitted).
22. Narayanan, V., Lorenz, K., Kim, W., and Mahajan, S., 2001b, Appl. Phys. Lett., 78, 1544.
23. Narayanan, V., Mahajan, S., Sukidi, N., Bachmann, K. J., Woods, V., and Dietz, N., 2000, Phil. Mag. A, 80, 555.
24. Ning, X. J., Chien, F. R., Pirouz, P., Yang, J. W., and Khan, M. A., 1996, J. Mater. Res., 11, 580.
25. Pearton, S. J., Zolper, J. C., Shul, R. J., and Ren, F., 1999, J. appl. Phys., 86, 1.
26. Ponce, F. A., 1997, Mater. Res. Soc. Bull., 22, 51.
27. Ruterana, P., Barbaray, B., Bere, A., Vermaut, P., Hairie, A., Paumier, E., Noet, G., Salvador, A., Botchkarev, A., and Morkoc, H., 1999, Phys. Rev. B, 59, 15917.
28. Saarinen, K., Seppala, P., Oila, J., Hautojarvi, P., Corbel, C., Briot, O., and Aulombard, R. L., 1998, Appl. Phys. Lett., 73, 3253.
29. Srikant, V., Speck, J. S., and Clarke, D. R., 1997, J. appl. Phys., 82, 4286.
30. Sugiura, L., Itaya, K., Nishio, J., Fujimoto, H., and Kokubun, Y., 1997, J. appl. Phys., 82, 4877.
31. Vennegues, P., Beaumont, B., Haffouz, S., Vaille, M. and Gibart, P., 1998, J. Cryst. Growth, 187, 167.
32. Vennegues, P., Beaumont, B., Vaille, M., and Gibart, P., 1997, J. Cryst. Growth, 173, 249.
33. Vardya, R., and Mahajan, S., 1995, Phil. Mag. A, 71, 465.
34. Wang, T., Shirahama, T., Sun, H. B., Wang, H. X., Bai, J., and Sakai, S., 2000, Appl. Phys. Lett., 76, 2220.
35. Wu, X. H., Brown, L. M., Kapolnek, D., Keller, S., Keller, B. DenBaars, S. P., and Speck, J. S., 1996a, J. appl. Phys., 80, 3228.
36. Wu, X. H., Fini, P., Keller, S., Tarsa, E. J., Heying, B., Mishra, U. K., Denbaars, S. P., and Speck, J. S., 1996b, Jap. J. appl. Phys., 35, L1648.
37. Wu, X. H., Fini, P., Tarsa, E. J., Heying, B., Keller, S., Mishra, U. K., Denbaars, S. P., and Speck, J. S., 1998, J. Cryst. Growth, 189-190, 231.
38. Wu, X. H., Kapolnek, D., Tarsa, E. J., Heying, B., Keller, S., Keller, B. P., Mishra, U. K., Denbaars, S. P., and Speck, J. S., 1996c, Appl. Phys. Lett., 68, 1371.
39. Wuu, D. S., Hong, R. H., Tseng, W. H., Lin, W. T., and Kung, C. Y., 2000, J. Cryst. Growth, 220, 235.
40. Yi, M. S., Lee, H. H., Kim, D. J., Park, S. J., Noh, D. Y., Kim, C. C., and He, J. H., 1999, Appl. Phys. Lett., 75, 2187.