Investigation of optical properties of InGaN multiple quantum wells on free-standing GaN substrates grown by metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 518-521

  Ohno, Akihito ^a   Tomita, Nobuyuki ^a   Yamada, Tomoo ^b   Okagawa, Hiroaki ^b   Takemi, Masayoshi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b Mitsubishi Cable Industries Ltd   (Japan)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. Nitrides

Indexed keywords

GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

GROWTH TEMPERATURE; MEASUREMENT TEMPERATURE; MULTIPLE QUANTUM WELLS (MQW); SAPPHIRE SUBSTRATES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33846416213     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.068     Document Type: Article

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