Dislocation behavior in InGaN/GaN multi-quantum-well structure grown by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 80, Issue 21, 2002, Pages 3949-3951

  Kim, Y W ^a   Suh, E K ^b   Lee, H J ^b  

^a Seoul National University   (South Korea)

^b Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL SIZE; GAN BUFFER; GLIDE PLANES; INGAN/GAN; MULTI-QUANTUM WELL STRUCTURES; PROPAGATION CHARACTERISTICS; QUANTUM WELL; THREADING DISLOCATION;

BURGERS VECTOR; GALLIUM NITRIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 79955989205     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1481983     Document Type: Article

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