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Journal of Crystal Growth

Volumn 312, Issue 18, 2010, Pages 2599-2606

Extended defects in bulk GaN and III-nitrides grown on this substrate

(1) Liliental Weber, Z a

a LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

Author keywords

A1. Line defects; A1. Planar defects; A2. Growth from solution; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

A2. GROWTH FROM SOLUTION; GROWTH FROM SOLUTION; LINE DEFECTS; PLANAR DEFECT; SEMI CONDUCTING III-V MATERIALS;

CRYSTALS; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); GALLIUM ALLOYS; GALLIUM NITRIDE; GRAIN BOUNDARIES; GRAIN GROWTH; SEMICONDUCTOR GROWTH; SUBSTRATES;

DEFECTS;

EID: 77955432543 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.04.019 Document Type: Conference Paper

Times cited : (4)

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