Direct observation of formation of threading dislocations from stacking faults in GaN layer grown on (0 0 0 1) sapphire

Scripta Materialia

Volumn 64, Issue 1, 2011, Pages 93-96

  Meng, F Y ^a   Han, I ^a   McFelea, H ^a   Lindow, E ^b   Bertram, R ^b   Werkhoven, C ^b   Arena, C ^b   Mahajan, S ^a  

^a Arizona State University   (United States)

^b GaNotec Inc   (United States)

Author keywords

GaN; High resolution electron microscopy; Stacking faults; Threading dislocations

Indexed keywords

DIRECT OBSERVATION; GAN; GAN LAYERS; HYDRIDE VAPOR PHASE EPITAXY; SHOCKLEY PARTIALS; STACKING SEQUENCE; THREADING DISLOCATION;

EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; SAPPHIRE; SULFUR COMPOUNDS;

STACKING FAULTS;

EID: 77958040963     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.scriptamat.2010.09.012     Document Type: Article

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