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Volumn 369, Issue 1951, 2011, Pages 3554-3574

Introduction to spin-polarized ballistic hot electron injection and detection in silicon

Author keywords

Ballistic hot electron transport; Semiconductor spintronics; Spin injection and detection; Spin precession; Spin polarized electrons

Indexed keywords

BALLISTICS; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; FERROMAGNETIC MATERIALS; FERROMAGNETISM; OHMIC CONTACTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES;

EID: 80054979514     PISSN: 1364503X     EISSN: None     Source Type: Journal    
DOI: 10.1098/rsta.2011.0137     Document Type: Conference Paper
Times cited : (27)

References (110)
  • 1
    • 11544369493 scopus 로고
    • Thermodynamic analysis of interfacial transport and of the thermomagnetoelectric system
    • doi:10.1103/PhysRevB.35.4959
    • Johnson, M. & Silsbee, R. 1987 Thermodynamic analysis of interfacial transport and of the thermomagnetoelectric system. Phys. Rev. B 35, 4959-4972. (doi:10.1103/PhysRevB.35.4959)
    • (1987) Phys. Rev. B , vol.35 , pp. 4959-4972
    • Johnson, M.1    Silsbee, R.2
  • 2
    • 0009906761 scopus 로고    scopus 로고
    • Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor
    • doi:10.1103/PhysRevB.62.R4790
    • Schmidt, G., Ferrand, D., Molenkamp, L., Filip, A. & van Wees, B. 2000 Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor. Phys. Rev. B 62, R4790-R4793. (doi:10.1103/PhysRevB.62.R4790)
    • (2000) Phys. Rev. B , vol.62
    • Schmidt, G.1    Ferrand, D.2    Molenkamp, L.3    Filip, A.4    Van Wees, B.5
  • 3
    • 17444385281 scopus 로고    scopus 로고
    • Concepts for spin injection into semiconductors-a review
    • DOI 10.1088/0022-3727/38/7/R01
    • Schmidt, G. 2005 Concepts for spin injection into semiconductors: a review. J. Phys. D 38, R107. (doi:10.1088/0022-3727/38/7/R01) (Pubitemid 40541040)
    • (2005) Journal of Physics D: Applied Physics , vol.38 , Issue.7
    • Schmidt, G.1
  • 4
    • 0034670796 scopus 로고    scopus 로고
    • Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem
    • DOI 10.1103/PhysRevB.62.R16267, R16267
    • Rashba, E. 2000 Theory of electrical spin injection: tunnel contacts as a solution of the conductivity mismatch problem. Phys. Rev. B 62, R16 267-16 270. (doi:10.1103/PhysRevB.62.R16267) (Pubitemid 32372706)
    • (2000) Physical Review B - Condensed Matter and Materials Physics , vol.62 , Issue.24
    • Rashba, E.I.1
  • 5
    • 28544446319 scopus 로고
    • Boundary resistance of the ferromagnetic-nonferromagnetic metal interface
    • doi:10.1103/PhysRevLett. 58.2271
    • Son, P. C., Kempen, H. & Wyder, P. 1987 Boundary resistance of the ferromagnetic-nonferromagnetic metal interface. Phys. Rev. Lett. 58, 2271-2273. (doi:10.1103/PhysRevLett. 58.2271)
    • (1987) Phys. Rev. Lett. , vol.58 , pp. 2271-2273
    • Son, P.C.1    Kempen, H.2    Wyder, P.3
  • 6
    • 33646721887 scopus 로고
    • Ferromagnet-nonferromagnet interface resistance
    • doi:10.1103/PhysRevLett.60.377
    • Johnson, M. & Silsbee, R. H. 1988 Ferromagnet-nonferromagnet interface resistance. Phys. Rev. Lett. 60, 377. (doi:10.1103/PhysRevLett.60.377)
    • (1988) Phys. Rev. Lett. , vol.60 , pp. 377
    • Johnson, M.1    Silsbee, R.H.2
  • 7
    • 24444468592 scopus 로고
    • Spin polarization of electrons tunneling from films of Fe, Co, Ni, and Gd
    • doi:10.1103/PhysRevB.7.318
    • Tedrow, P. M. & Meservey, R. 1973 Spin polarization of electrons tunneling from films of Fe, Co, Ni, and Gd. Phys. Rev. B 7, 318-326. (doi:10.1103/PhysRevB.7.318)
    • (1973) Phys. Rev. B , vol.7 , pp. 318-326
    • Tedrow, P.M.1    Meservey, R.2
  • 8
    • 0033576696 scopus 로고    scopus 로고
    • Injection and detection of a spin polarized current in a n-i-p light emitting diode
    • doi:10.1038/45502
    • Fiederling, R., Keim, M., Reuscher, G., Ossau, W., Schmidt, G., Waag, A. & Molenkamp, L. W. 1999 Injection and detection of a spin polarized current in a n-i-p light emitting diode. Nature 402, 787-790. (doi:10.1038/45502)
    • (1999) Nature , vol.402 , pp. 787-790
    • Fiederling, R.1    Keim, M.2    Reuscher, G.3    Ossau, W.4    Schmidt, G.5    Waag, A.6    Molenkamp, L.W.7
  • 9
    • 0033576573 scopus 로고    scopus 로고
    • Electrical spin injection in a ferromagnetic semiconductor heterostructure
    • doi:10.1038/45509
    • Ohno, Y., Young, D. K., Beschoten, B., Matsukura, F., Ohno, H. & Awschalom, D. D. 1999 Electrical spin injection in a ferromagnetic semiconductor heterostructure. Nature 402, 790-792. (doi:10.1038/45509)
    • (1999) Nature , vol.402 , pp. 790-792
    • Ohno, Y.1    Young, D.K.2    Beschoten, B.3    Matsukura, F.4    Ohno, H.5    Awschalom, D.D.6
  • 10
    • 0001588104 scopus 로고
    • Electronentheorie der Metalle
    • (ed. S. Flügge). Berlin, Germany: Springer
    • Sommerfeld, A. & Bethe, H. 1933 Electronentheorie der Metalle. In Handbuch der Physik (ed. S. Flügge). Berlin, Germany: Springer.
    • (1933) Handbuch der Physik
    • Sommerfeld, A.1    Bethe, H.2
  • 12
    • 0001305584 scopus 로고
    • Tunneling through thin insulating layers
    • doi:10.1063/1.1735973
    • Fisher, J. & Giaever, I. 1961 Tunneling through thin insulating layers. J. Appl. Phys. 32, 172. (doi:10.1063/1.1735973)
    • (1961) J. Appl. Phys. , vol.32 , pp. 172
    • Fisher, J.1    Giaever, I.2
  • 13
    • 36149005916 scopus 로고
    • Energy gap in superconductors measured by electron tunneling
    • doi:10.1103/PhysRevLett.5.147
    • Giaever, I. 1960 Energy gap in superconductors measured by electron tunneling. Phys. Rev. Lett. 5, 147-148. (doi:10.1103/PhysRevLett.5.147)
    • (1960) Phys. Rev. Lett. , vol.5 , pp. 147-148
    • Giaever, I.1
  • 14
    • 36849122441 scopus 로고
    • Generalized thermal j-v characteristic for electric tunnel effect
    • doi:10.1063/1.1713820
    • Simmons, J. G. 1964 Generalized thermal j-v characteristic for electric tunnel effect. J. Appl. Phys. 35, 2655. (doi:10.1063/1.1713820)
    • (1964) J. Appl. Phys. , vol.35 , pp. 2655
    • Simmons, J.G.1
  • 15
    • 0014764377 scopus 로고
    • Tunneling conductance of asymmetrical barriers
    • doi:10.1063/1.1659141
    • Brinkman, W. F., Dynes, R. C. & Rowell, J. M. 1970 Tunneling conductance of asymmetrical barriers. J. Appl. Phys. 41, 1915-1921. (doi:10.1063/1.1659141)
    • (1970) J. Appl. Phys. , vol.41 , pp. 1915-1921
    • Brinkman, W.F.1    Dynes, R.C.2    Rowell, J.M.3
  • 16
    • 2342490363 scopus 로고    scopus 로고
    • Spin-tunneling in ferromagnetic junctions
    • doi:10.1146/annurev.matsci.29.1.381
    • Moodera, J. S., Nassar, J. & Mathon, G. 1999 Spin-tunneling in ferromagnetic junctions. Annu. Rev. Mater. Sci. 29, 381-432. (doi:10.1146/annurev.matsci.29.1.381)
    • (1999) Annu. Rev. Mater. Sci. , vol.29 , pp. 381-432
    • Moodera, J.S.1    Nassar, J.2    Mathon, G.3
  • 17
    • 2342629197 scopus 로고    scopus 로고
    • Thermodynamic evaluation of the interface stability between selected metal oxides and Co
    • doi:10.1557/JMR.2004.0153
    • Yang, Y., Ladwig, P. F., Chang, Y. Au., Liu, F., Pant, B. B., Schultz, A. E. 2004 Thermodynamic evaluation of the interface stability between selected metal oxides and Co. J. Mater. Res. 19, 1181-1186. (doi:10.1557/JMR.2004.0153)
    • (2004) J. Mater. Res. , vol.19 , pp. 1181-1186
    • Yang, Y.1    Ladwig, P.F.2    Au., C.Y.3    Liu, F.4    Pant, B.B.5    Schultz, A.E.6
  • 18
    • 34250965271 scopus 로고
    • Semiconductor theory of the barrier film
    • doi:10.1007/BF01774216
    • Schottky, W. 1938 Semiconductor theory of the barrier film. Naturwiss. 26, 843. (doi:10.1007/BF01774216)
    • (1938) Naturwiss. , vol.26 , pp. 843
    • Schottky, W.1
  • 19
    • 0001766106 scopus 로고
    • Deviations from Ohm's law in semiconductors
    • Schottky, W. 1940 Deviations from Ohm's law in semiconductors. Phys. Z. 41, 570.
    • (1940) Phys. Z. , vol.41 , pp. 570
    • Schottky, W.1
  • 20
    • 84885149819 scopus 로고
    • Note on the contact between a metal and an insulator or semi-conductor
    • doi:10.1017/S0305004100020570
    • Mott, N. F. 1938 Note on the contact between a metal and an insulator or semi-conductor. Proc. Camb. Phil. Soc. 34, 568-572. (doi:10.1017/ S0305004100020570)
    • (1938) Proc. Camb. Phil. Soc. , vol.34 , pp. 568-572
    • Mott, N.F.1
  • 21
    • 0003166064 scopus 로고
    • The theory of crystal rectifiers
    • doi:10.1098/rspa.1939. 0051
    • Mott, N. F. 1939 The theory of crystal rectifiers. Proc. R. Soc. Lond. A 171, 27-38. (doi:10.1098/rspa.1939.0051)
    • (1939) Proc. R. Soc. Lond. A , vol.171 , pp. 27-38
    • Mott, N.F.1
  • 22
    • 0001597428 scopus 로고
    • Schottky barrier heights and the continuum of gap states
    • doi:10.1103/PhysRevLett.52.465
    • Tersoff, J. 1984 Schottky barrier heights and the continuum of gap states. Phys. Rev. Lett. 52, 465-468. (doi:10.1103/PhysRevLett.52.465)
    • (1984) Phys. Rev. Lett. , vol.52 , pp. 465-468
    • Tersoff, J.1
  • 23
    • 0002660404 scopus 로고
    • The tunnel-emission amplifier
    • Mead, C. 1960 The tunnel-emission amplifier. Proc. IRE 48, 359-361.
    • (1960) Proc. IRE , vol.48 , pp. 359-361
    • Mead, C.1
  • 24
    • 36849121832 scopus 로고
    • Operation of tunnel-emission devices
    • doi:10.1063/1.1736064
    • Mead, C. 1961 Operation of tunnel-emission devices. J. Appl. Phys. 32, 646-652. (doi:10.1063/1.1736064)
    • (1961) J. Appl. Phys. , vol.32 , pp. 646-652
    • Mead, C.1
  • 25
    • 36149017096 scopus 로고
    • Transport of hot electrons in thin gold films
    • doi:10.1103/PhysRevLett.8.56
    • Mead, C. A. 1962 Transport of hot electrons in thin gold films. Phys. Rev. Lett. 8, 56-57. (doi:10.1103/PhysRevLett.8.56)
    • (1962) Phys. Rev. Lett. , vol.8 , pp. 56-57
    • Mead, C.A.1
  • 26
    • 3743148671 scopus 로고
    • Hot electrons in metal films: Injection and collection
    • doi:10.1103/PhysRevLett.6.341
    • Spratt, J., Schwartz, R. & Kane, W. 1961 Hot electrons in metal films: injection and collection. Phys. Rev. Lett. 6, 341-342. (doi:10.1103/PhysRevLett.6.341)
    • (1961) Phys. Rev. Lett. , vol.6 , pp. 341-342
    • Spratt, J.1    Schwartz, R.2    Kane, W.3
  • 28
    • 34249108985 scopus 로고    scopus 로고
    • Spintronics: Silicon twists
    • DOI 10.1038/447269a, PII 447269A
    • Zutíc, I. & Fabian, J. 2007 Spintronics: silicon twists. Nature 447, 268-269. (doi:10.1038/447269a) (Pubitemid 46788821)
    • (2007) Nature , vol.447 , Issue.7142 , pp. 269-270
    • Zutic, I.1    Fabian, J.2
  • 29
    • 0001103704 scopus 로고
    • Spin relaxation of conduction electrons in noncentrosymmetric semiconductors
    • D'yakonov, M. & Perel, V. 1971 Spin relaxation of conduction electrons in noncentrosymmetric semiconductors. Sov. Phys. Solid State 13, 3023.
    • (1971) Sov. Phys. Solid State , vol.13 , pp. 3023
    • D'Yakonov, M.1    Perel, V.2
  • 30
    • 29944434830 scopus 로고    scopus 로고
    • Isotope effects on the optical spectra of semiconductors
    • DOI 10.1103/RevModPhys.77.1173
    • Cardona, M. & Thewalt, M. 2005 Isotope effects on the optical spectra of semiconductors. Rev. Mod. Phys. 77, 1173-1224. (doi:10.1103/RevModPhys.77. 1173) (Pubitemid 43040073)
    • (2005) Reviews of Modern Physics , vol.77 , Issue.4 , pp. 1173-1224
    • Cardona, M.1    Thewalt, M.L.W.2
  • 31
    • 0030246383 scopus 로고    scopus 로고
    • Spin-valve effects in nickel/silicon/nickel junctions
    • Jia, Y. Q., Shi, R. C. & Chou, S. Y. 1996 Spin-valve effects in nickel/silicon/nickel junctions. IEEE Trans. Magn. 32, 4707-4709. (doi:10.1109/20.539125) (Pubitemid 126780145)
    • (1996) IEEE Transactions on Magnetics , vol.32 , Issue.PART 2 , pp. 4707-4709
    • Jia, Y.Q.1    Shi, R.C.2    Chou, S.Y.3
  • 35
    • 2442438061 scopus 로고    scopus 로고
    • Magnetotransport study of nanoscale permalloy-Si tunnelling structures in lateral spin-valve geometry
    • doi:10.1088/0022-3727/37/9/002
    • Hacia, S., Last, T., Fischer, S. F. & Kunze, U. 2004 Magnetotransport study of nanoscale permalloy-Si tunnelling structures in lateral spin-valve geometry. J. Phys. D 37, 1310-1315. (doi:10.1088/0022-3727/37/9/002)
    • (2004) J. Phys. D , vol.37 , pp. 1310-1315
    • Hacia, S.1    Last, T.2    Fischer, S.F.3    Kunze, U.4
  • 36
    • 0037458137 scopus 로고    scopus 로고
    • High current gain silicon-based spin transistor
    • doi:10.1088/0022-3727/36/2/303
    • Dennis, C. L., Sirisathitkul, C., Ensell, G. J., Gregg, J. F. & Thompson, S. M. 2003 High current gain silicon-based spin transistor. J. Phys. D 36, 81-87. (doi:10.1088/0022-3727/36/2/303)
    • (2003) J. Phys. D , vol.36 , pp. 81-87
    • Dennis, C.L.1    Sirisathitkul, C.2    Ensell, G.J.3    Gregg, J.F.4    Thompson, S.M.5
  • 37
    • 33748329817 scopus 로고    scopus 로고
    • Evidence for electrical spin tunnel injection into silicon
    • DOI 10.1063/1.2229870
    • Dennis, C. L., Gregg, J. F., Ensell, G. J. & Thompson, S. M. 2006 Evidence for electrical spin tunnel injection into silicon. J. Appl. Phys. 100, 043717. (doi:10.1063/1.2229870) (Pubitemid 44327279)
    • (2006) Journal of Applied Physics , vol.100 , Issue.4 , pp. 043717
    • Dennis, C.L.1    Gregg, J.F.2    Ensell, G.J.3    Thompson, S.M.4
  • 38
    • 14944366457 scopus 로고    scopus 로고
    • Tunnel barrier fabrication on Si and its impact on a spin transistor
    • DOI 10.1016/j.jmmm.2004.11.443, PII S0304885304017044, Proceedings of the Joint European Magnetic Symposia - JEMS' 04
    • Dennis, C. L., Tiusanb, C. V., Ferreirac, R. A., Gregga, J. F., Enselld, G. J., Thompsone, S. M. & Freitas, P. P. 2005 Tunnel barrier fabrication on si and its impact on a spin transistor. J. Magn. Magn. Mater. 290, 1383-1386. (doi:10.1016/j.jmmm.2004.11.443) (Pubitemid 40370448)
    • (2005) Journal of Magnetism and Magnetic Materials , vol.290-291 PART 2 , pp. 1383-1386
    • Dennis, C.L.1    Tiusan, C.V.2    Ferreira, R.A.3    Gregg, J.F.4    Ensell, G.J.5    Thompson, S.M.6    Freitas, P.P.7
  • 40
    • 2142649268 scopus 로고    scopus 로고
    • A spin metaloxide semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain
    • doi:10.1063/1.1689403
    • Sugahara, S. & Tanaka, M. 2004 A spin metaloxide semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain. Appl. Phys. Lett. 84, 2307. (doi:10.1063/1.1689403)
    • (2004) Appl. Phys. Lett. , vol.84 , pp. 2307
    • Sugahara, S.1    Tanaka, M.2
  • 41
    • 80055018853 scopus 로고    scopus 로고
    • Room temperature silicon spin-based transistors
    • (ed. N. Koshida). New York, NY: Springer doi:10.1007/978-0-387-78689-6-6
    • Cahay, M. & Bandyopadhyay, S. 2009 Room temperature silicon spin-based transistors. In Device applications of silicon nanocrystals and nanostructures (ed. N. Koshida). New York, NY: Springer. (doi:10.1007/978-0-387- 78689-6-6)
    • (2009) Device Applications of Silicon Nanocrystals and Nanostructures
    • Cahay, M.1    Bandyopadhyay, S.2
  • 42
    • 67650709619 scopus 로고    scopus 로고
    • Magnetoelectronic phenomena at a ferromagnet-semiconductor interface
    • doi:10.1103/PhysRevLett.84.5022
    • Monzon, F., Tang, H. & Roukes, M. 2000 Magnetoelectronic phenomena at a ferromagnet-semiconductor interface. Phys. Rev. Lett. 84, 5022. (doi:10.1103/PhysRevLett.84.5022)
    • (2000) Phys. Rev. Lett. , vol.84 , pp. 5022
    • Monzon, F.1    Tang, H.2    Roukes, M.3
  • 43
    • 0342536147 scopus 로고
    • Interfacial charge-spin coupling: Injection and detection of spin magnetization in metals
    • doi:10.1103/PhysRevLett.55.1790
    • Johnson, M. & Silsbee, R. 1985 Interfacial charge-spin coupling: injection and detection of spin magnetization in metals. Phys. Rev. Lett. 55, 1790-1793. (doi:10.1103/PhysRevLett.55.1790)
    • (1985) Phys. Rev. Lett. , vol.55 , pp. 1790-1793
    • Johnson, M.1    Silsbee, R.2
  • 44
    • 0038656446 scopus 로고    scopus 로고
    • Tunneling in epitaxial Fe/Si/Fe structures with strong antiferromagnetic interlayer coupling
    • doi:10.1063/1.1543989
    • Gareev, R. R., Pohlmann, L. L., Stein, S., Buergler, D. E., Gruenberg, P. A. & Siegel, M. 2003 Tunneling in epitaxial Fe/Si/Fe structures with strong antiferromagnetic interlayer coupling. J. Appl. Phys. 93, 8038-8040. (doi:10.1063/1.1543989)
    • (2003) J. Appl. Phys. , vol.93 , pp. 8038-8040
    • Gareev, R.R.1    Pohlmann, L.L.2    Stein, S.3    Buergler, D.E.4    Gruenberg, P.A.5    Siegel, M.6
  • 45
    • 33646416235 scopus 로고    scopus 로고
    • Resonant tunneling magnetoresistance in antiferromagnetically coupled Fe-based structures with multilayered Si/Ge spacers
    • doi:10.1063/1.2198812
    • Gareev, R. R., Weides, M., Schreiber, R. & Poppe, U. 2006 Resonant tunneling magnetoresistance in antiferromagnetically coupled Fe-based structures with multilayered Si/Ge spacers. Appl. Phys. Lett. 88, 172105. (doi:10.1063/1.2198812)
    • (2006) Appl. Phys. Lett. , vol.88 , pp. 172105
    • Gareev, R.R.1    Weides, M.2    Schreiber, R.3    Poppe, U.4
  • 46
    • 0035509039 scopus 로고    scopus 로고
    • Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor
    • doi:10.1103/PhysRevB.64.184420
    • Fert, A. & Jaffrès, H. 2001 Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor. Phys. Rev. B 64, 184420. (doi:10.1103/PhysRevB.64.184420)
    • (2001) Phys. Rev. B , vol.64 , pp. 184420
    • Fert, A.1    Jaffrès, H.2
  • 47
    • 33646750229 scopus 로고    scopus 로고
    • 3-silicon tunnel contacts for electrical spin injection into silicon
    • doi:10.1063/1.2176317
    • 3-silicon tunnel contacts for electrical spin injection into silicon. J. Appl. Phys. 99, 08S701. (doi:10.1063/1.2176317)
    • (2006) J. Appl. Phys. , vol.99
    • Min, B.C.1    Lodder, J.C.2    Jansen, R.3    Motohashi, K.4
  • 48
    • 33749989400 scopus 로고    scopus 로고
    • Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets
    • DOI 10.1038/nmat1736, PII NMAT1736
    • Min, B. C., Motohashi, K., Lodder, C. & Jansen, R. 2006 Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets. Nat. Mater. 5, 817-822. (doi:10.1038/nmat1736) (Pubitemid 44570865)
    • (2006) Nature Materials , vol.5 , Issue.10 , pp. 817-822
    • Min, B.-C.1    Motohashi, K.2    Lodder, C.3    Jansen, R.4
  • 49
    • 42349100719 scopus 로고    scopus 로고
    • Tunneling characteristics across nanoscale metal ferric junction lines into doped Si
    • DOI 10.1063/1.2912530
    • Wang, K., Stehlik, J. & Wang, J.-Q. 2008 Tunneling characteristics across nanoscale metal ferric junction lines into doped Si. Appl. Phys. Lett. 92, 152118. (doi:10.1063/1.2912530) (Pubitemid 351555716)
    • (2008) Applied Physics Letters , vol.92 , Issue.15 , pp. 152118
    • Wang, K.1    Stehlik, J.2    Wang, J.-Q.3
  • 51
    • 65449122802 scopus 로고    scopus 로고
    • Magnetic properties of embedded ferromagnetic contacts to silicon for spin injection
    • doi:10.1088/0022-3727/42/8/085004
    • Dimopoulos, T., Schwarz, D., Uhrmann, T., Kirk, D., Kohn, A., Weyers, S., Paschen, U. & Brückl, H. 2009 Magnetic properties of embedded ferromagnetic contacts to silicon for spin injection. J. Phys. D 42, 085004. (doi:10.1088/0022-3727/42/8/085004)
    • (2009) J. Phys. D , vol.42 , pp. 085004
    • Dimopoulos, T.1    Schwarz, D.2    Uhrmann, T.3    Kirk, D.4    Kohn, A.5    Weyers, S.6    Paschen, U.7    Brückl, H.8
  • 53
    • 34247859038 scopus 로고    scopus 로고
    • Semiconductors between spin-polarized sources and drains
    • DOI 10.1109/TED.2007.894372, Special Issue on Spintronics
    • Fert, A., George, J.-M., Jaffres, H. & Mattana, R. 2007 Semiconductors between spin-polarized sources and drains. IEEE Trans. Elec. Dev. 54, 921-932. (doi:10.1109/TED.2007.894372) (Pubitemid 46691551)
    • (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.5 , pp. 921-932
    • Fert, A.1    George, J.-M.2    Jaffres, H.3    Mattana, R.4
  • 54
    • 34249061541 scopus 로고    scopus 로고
    • Electronic measurement and control of spin transport in silicon
    • DOI 10.1038/nature05803, PII NATURE05803
    • Appelbaum, I., Huang, B. & Monsma, D. J. 2007 Electronic measurement and control of spin transport in silicon. Nature 447, 295-298. (doi:10.1038/nature05803) (Pubitemid 46788838)
    • (2007) Nature , vol.447 , Issue.7142 , pp. 295-298
    • Appelbaum, I.1    Huang, B.2    Monsma, D.J.3
  • 55
    • 34547613905 scopus 로고    scopus 로고
    • Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact
    • doi:10.1038/nphys673
    • Jonker, B. T., Kioseoglou, G., Hanbicki, A. T., Li, C. H. & Thompson, P. E. 2007 Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact. Nat. Phys. 3, 542-546. (doi:10.1038/nphys673)
    • (2007) Nat. Phys. , vol.3 , pp. 542-546
    • Jonker, B.T.1    Kioseoglou, G.2    Hanbicki, A.T.3    Li, C.H.4    Thompson, P.E.5
  • 57
    • 58849156935 scopus 로고    scopus 로고
    • Spin injection in silicon at zero magnetic field
    • doi:10.1063/1.3064135
    • Grenet, L. et al. 2009 Spin injection in silicon at zero magnetic field. Appl. Phys. Lett. 94, 03250. (doi:10.1063/1.3064135)
    • (2009) Appl. Phys. Lett. , vol.94 , pp. 03250
    • Grenet, L.1
  • 59
    • 36348942865 scopus 로고    scopus 로고
    • Electrical injection and detection of spin-polarized carriers in silicon in a lateral transport geometry
    • doi:10.1063/1.2817747)
    • van't Erve O. M. J., Hanbicki A. T., Holub M., Li C. H., Awo-Affouda C., Thompson P. E., Jonker B. T. 2007 Electrical injection and detection of spin-polarized carriers in silicon in a lateral transport geometry. Appl. Phys. Lett. 91, 212109, doi:10.1063/1.2817747)
    • (2007) Appl. Phys. Lett. , vol.91 , pp. 212109
    • Van'T Erve, O.M.J.1    Hanbicki, A.T.2    Holub, M.3    Li, C.H.4    Awo-Affouda, C.5    Thompson, P.E.6    Jonker, B.T.7
  • 60
    • 66949118827 scopus 로고    scopus 로고
    • Electrical spin injection into silicon using MgO tunnel barrier
    • doi:10.1143/APEX.2.053003
    • Sasaki, T., Oikawa, T., Suzuki, T., Shiraishi, M., Suzuki, Y. & Tagami, K. 2009 Electrical spin injection into silicon using MgO tunnel barrier. Appl. Phys. Expr. 2, 53003. (doi:10.1143/APEX.2.053003)
    • (2009) Appl. Phys. Expr. , vol.2 , pp. 53003
    • Sasaki, T.1    Oikawa, T.2    Suzuki, T.3    Shiraishi, M.4    Suzuki, Y.5    Tagami, K.6
  • 61
    • 77950334035 scopus 로고    scopus 로고
    • Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession
    • doi:10.1063/1.3367748
    • Sasaki, T., Oikawa, T., Suzuki, T., Shiraishi, M., Suzuki, Y. & Noguchi, K. 2010 Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession. Appl. Phys. Lett. 96, 122101. (doi:10.1063/1. 3367748)
    • (2010) Appl. Phys. Lett. , vol.96 , pp. 122101
    • Sasaki, T.1    Oikawa, T.2    Suzuki, T.3    Shiraishi, M.4    Suzuki, Y.5    Noguchi, K.6
  • 62
    • 78651304164 scopus 로고    scopus 로고
    • Comparison of spin signals in silicon between nonlocal four-terminal and three-terminal methods
    • doi:10.1063/1.3536488
    • Sasaki, T., Oikawa, T., Shiraishi, M., Suzuki, Y. & Noguchi, K. 2011 Comparison of spin signals in silicon between nonlocal four-terminal and three-terminal methods. Appl. Phys. Lett. 98, 012508. (doi:10.1063/1.3536488)
    • (2011) Appl. Phys. Lett. , vol.98 , pp. 012508
    • Sasaki, T.1    Oikawa, T.2    Shiraishi, M.3    Suzuki, Y.4    Noguchi, K.5
  • 63
    • 79951642354 scopus 로고    scopus 로고
    • Room-temperature electron spin transport in a highly doped Si channel
    • doi:10.1143/APEX.4.023003
    • Suzuki, T. Sasaki, T., Oikawa, T., Shiraishi, M., Suzuki, Y. & Noguchi, K. 2011 Room-temperature electron spin transport in a highly doped Si channel. Appl. Phys. Expr. 4, 023003. (doi:10.1143/APEX.4.023003)
    • (2011) Appl. Phys. Expr. , vol.4 , pp. 023003
    • Suzuki Sasaki T, T.1    Oikawa, T.2    Shiraishi, M.3    Suzuki, Y.4    Noguchi, K.5
  • 65
    • 42149195052 scopus 로고    scopus 로고
    • Oblique Hanle effect in semiconductor spin transport devices
    • DOI 10.1063/1.2907497
    • Li, J., Huang, B. & Appelbaum, I. 2008 Oblique Hanle effect in semiconductor spin transport devices. Appl. Phys. Lett. 92, 142507. (doi:10.1063/1.2907497) (Pubitemid 351535623)
    • (2008) Applied Physics Letters , vol.92 , Issue.14 , pp. 142507
    • Li, J.1    Huang, B.2    Appelbaum, I.3
  • 66
    • 70849105299 scopus 로고    scopus 로고
    • Electrical creation of spin polarization in silicon at room temperature
    • doi:10.1038/nature08570
    • Dash, S. P., Sharma, S., Patel, R. S., de Jong, M. P. & Jansen, R. 2009 Electrical creation of spin polarization in silicon at room temperature. Nature 462, 491-494. (doi:10.1038/nature08570)
    • (2009) Nature , vol.462 , pp. 491-494
    • Dash, S.P.1    Sharma, S.2    Patel, R.S.3    De Jong, M.P.4    Jansen, R.5
  • 67
    • 60149094046 scopus 로고    scopus 로고
    • Enhancement of the spin accumulation at the interface between a spin-polarized tunnel junction and a semiconductor
    • doi:10.1103/PhysRevLett.102.036601
    • Tran, M., Jaffrès, H., Deranlot, C., George, J.-M., Fert, A., Miard, A. & Lemaître, A. 2009 Enhancement of the spin accumulation at the interface between a spin-polarized tunnel junction and a semiconductor. Phys. Rev. Lett. 102, 036601. (doi:10.1103/PhysRevLett.102.036601)
    • (2009) Phys. Rev. Lett. , vol.102 , pp. 036601
    • Tran, M.1    Jaffrès, H.2    Deranlot, C.3    George, J.-M.4    Fert, A.5    Miard, A.6    Lemaître, A.7
  • 69
    • 33749142719 scopus 로고    scopus 로고
    • Spin injection and detection in silicon
    • DOI 10.1103/PhysRevLett.97.026602
    • Zutíc, I., Fabian, J. & Erwin, S. C. 2006 Spin injection and detection in silicon. Phys. Rev. Lett. 97, 026602. (doi:10.1103/PhysRevLett.97. 026602) (Pubitemid 44467747)
    • (2006) Physical Review Letters , vol.97 , Issue.2 , pp. 026602
    • Zutic, I.1    Fabian, J.2    Erwin, S.C.3
  • 70
    • 2942576233 scopus 로고    scopus 로고
    • Tailoring ferromagnetic chalcopyrites
    • doi:10.1038/nmat1127
    • Erwin, S. C. & Zutíc, I. 2004 Tailoring ferromagnetic chalcopyrites. Nat. Mater. 3, 410-414. (doi:10.1038/nmat1127)
    • (2004) Nat. Mater. , vol.3 , pp. 410-414
    • Erwin, S.C.1    Zutíc, I.2
  • 72
    • 0037166833 scopus 로고    scopus 로고
    • 2 semiconductors
    • doi:10.1103/PhysRevLett.88.257203
    • 2 semiconductors. Phys. Rev. Lett. 88, 257203. (doi:10.1103/PhysRevLett.88.257203)
    • (2002) Phys. Rev. Lett. , vol.88 , pp. 257203
    • Cho, S.1
  • 73
    • 13844320944 scopus 로고    scopus 로고
    • 2:Mn
    • doi:10.1103/PhysRevLett.91.107202
    • 2:Mn. Phys. Rev. Lett. 91, 107202. (doi:10.1103/PhysRevLett.91.107202)
    • (2003) Phys. Rev. Lett. , vol.91 , pp. 107202
    • Ishida, Y.1
  • 75
    • 0142039865 scopus 로고    scopus 로고
    • The spin-valve transistor: A review and outlook
    • doi:10.1088/0022-3727/36/19/R01
    • Jansen, R. 2003 The spin-valve transistor: a review and outlook. J. Phys. D 36, R289. (doi:10.1088/0022-3727/36/19/R01)
    • (2003) J. Phys. D , vol.36
    • Jansen, R.1
  • 76
    • 0042378356 scopus 로고    scopus 로고
    • Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers
    • doi:10.1063/1.1592001
    • van Dijken, S., Jiang, X. & Parkin, S. S. P. 2003 Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers. Appl. Phys. Lett. 83, 951. (doi:10.1063/1.1592001)
    • (2003) Appl. Phys. Lett. , vol.83 , pp. 951
    • Van Dijken, S.1    Jiang, X.2    Parkin, S.S.P.3
  • 77
    • 34548009611 scopus 로고    scopus 로고
    • Experimental realization of a silicon spin field-effect transistor
    • DOI 10.1063/1.2770656
    • Huang, B., Monsma, D. J. & Appelbaum, I. 2007 Experimental realization of a silicon spin field-effect transistor. Appl. Phys. Lett. 91, 072501. (doi:10.1063/1.2770656) (Pubitemid 47283566)
    • (2007) Applied Physics Letters , vol.91 , Issue.7 , pp. 072501
    • Huang, B.1    Monsma, D.J.2    Appelbaum, I.3
  • 78
    • 77958451519 scopus 로고    scopus 로고
    • Reverse Schottky-asymmetry spin current detectors
    • doi:10.1063/1.3504659
    • Lu, Y. & Appelbaum, I. 2010 Reverse Schottky-asymmetry spin current detectors. Appl. Phys. Lett. 97, 162501. (doi:10.1063/1.3504659)
    • (2010) Appl. Phys. Lett. , vol.97 , pp. 162501
    • Lu, Y.1    Appelbaum, I.2
  • 79
    • 34547650642 scopus 로고    scopus 로고
    • 35% Magnetocurrent with spin transport through Si
    • DOI 10.1063/1.2767198
    • Huang, B., Zhao, L., Monsma, D. J. & Appelbaum, I. 2007 35% magnetocurrent with spin transport through Si. Appl. Phys. Lett. 91, 052501. (doi:10.1063/1.2767198) (Pubitemid 47210815)
    • (2007) Applied Physics Letters , vol.91 , Issue.5 , pp. 052501
    • Huang, B.1    Zhao, L.2    Monsma, D.J.3    Appelbaum, I.4
  • 80
    • 35548963355 scopus 로고    scopus 로고
    • Coherent spin transport through a 350 micron thick silicon wafer
    • DOI 10.1103/PhysRevLett.99.177209
    • Huang, B., Monsma, D. J. & Appelbaum, I. 2007 Coherent spin transport through a 350 micron thick silicon wafer. Phys. Rev. Lett. 99, 177209. (doi:10.1103/PhysRevLett.99.177209) (Pubitemid 350015153)
    • (2007) Physical Review Letters , vol.99 , Issue.17 , pp. 177209
    • Huang, B.1    Monsma, D.J.2    Appelbaum, I.3
  • 81
    • 11944262717 scopus 로고
    • Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions
    • doi:10.1103/PhysRevLett.74.3273
    • Moodera, J. S., Kinder, L. R., Wong, T. M. & Mesrevey, R. 1995 Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions. Phys. Rev. Lett. 74, 3273-3276. (doi:10.1103/PhysRevLett.74.3273)
    • (1995) Phys. Rev. Lett. , vol.74 , pp. 3273-3276
    • Moodera, J.S.1    Kinder, L.R.2    Wong, T.M.3    Mesrevey, R.4
  • 82
    • 0001739949 scopus 로고
    • Characterizing hot-carrier transport in silicon heterostructures with the use of ballistic-electron-emission microscopy
    • doi:10.1103/PhysRevB.48.5712
    • Bell, L. D., Manion, S. J., Hecht, M. H., Kaiser, W. J., Fathauer, R. W. & Milliken, A. M. 1993 Characterizing hot-carrier transport in silicon heterostructures with the use of ballistic-electron-emission microscopy. Phys. Rev. B 48, 5712-5715. (doi:10.1103/PhysRevB.48.5712)
    • (1993) Phys. Rev. B , vol.48 , pp. 5712-5715
    • Bell, L.D.1    Manion, S.J.2    Hecht, M.H.3    Kaiser, W.J.4    Fathauer, R.W.5    Milliken, A.M.6
  • 85
    • 0017453673 scopus 로고
    • A review of some charge transport properties of silicon
    • doi:10.1016/0038-1101(77)90054-5
    • Jacoboni, C., Canali, C., Ottaviani, G. & Alberigi Quaranta, A. 1977 A review of some charge transport properties of silicon. Solid State Electron. 20, 77-89. (doi:10.1016/0038-1101(77)90054-5)
    • (1977) Solid State Electron. , vol.20 , pp. 77-89
    • Jacoboni, C.1    Canali, C.2    Ottaviani, G.3    Alberigi Quaranta, A.4
  • 86
    • 55849085393 scopus 로고    scopus 로고
    • Non-ohmic spin transport in n-type doped silicon
    • doi:10.1103/PhysRevB.78.165329
    • Jang, H.-J., Xu, J., Li, J., Huang, B. & Appelbaum, I. 2008 Non-ohmic spin transport in n-type doped silicon. Phys. Rev. B 78, 165329. (doi:10.1103/PhysRevB.78.165329)
    • (2008) Phys. Rev. B , vol.78 , pp. 165329
    • Jang, H.-J.1    Xu, J.2    Li, J.3    Huang, B.4    Appelbaum, I.5
  • 87
    • 0032540916 scopus 로고    scopus 로고
    • Room temperature-operating spin-valve transistors formed by vacuum bonding
    • DOI 10.1126/science.281.5375.407
    • Monsma, D., Vlutters, R. & Lodder, J. 1998 Room temperature-operating spin-valve transistors formed by vacuum bonding. Science 281, 407-409. (doi:10.1126/science.281.5375.407) (Pubitemid 28340783)
    • (1998) Science , vol.281 , Issue.5375 , pp. 407-409
    • Monsma, D.J.1    Vlutters, R.2    Lodder, J.C.3
  • 88
    • 33751577961 scopus 로고    scopus 로고
    • Self-assembly of epitaxial monolayers for vacuum wafer bonding
    • DOI 10.1063/1.2399358
    • Altfeder, I., Huang, B., Appelbaum, I. & Walker, B. C. 2006 Self-assembly of epitaxial monolayers for vacuum wafer bonding. Appl. Phys. Lett. 89, 223127. (doi:10.1063/1.2399358) (Pubitemid 44847614)
    • (2006) Applied Physics Letters , vol.89 , Issue.22 , pp. 223127
    • Altfeder, I.1    Huang, B.2    Appelbaum, I.3    Walker, B.C.4
  • 89
    • 34250907189 scopus 로고
    • The magnetic influence on the polarization of resonance fluorescence
    • doi:10.1007/BF01331827
    • Hanle, W. 1924 The magnetic influence on the polarization of resonance fluorescence. Z. Physik 30, 93-105. (doi:10.1007/BF01331827)
    • (1924) Z. Physik , vol.30 , pp. 93-105
    • Hanle, W.1
  • 90
    • 0003144775 scopus 로고
    • An experimental measurement of the gyromagnetic ratio of the free electron
    • doi:10.1103/PhysRev.94.7
    • Louisell, W., Pidd, R. & Crane, H. 1954 An experimental measurement of the gyromagnetic ratio of the free electron. Phys. Rev. 94, 7-16. (doi:10.1103/PhysRev.94.7)
    • (1954) Phys. Rev. , vol.94 , pp. 7-16
    • Louisell, W.1    Pidd, R.2    Crane, H.3
  • 91
    • 2842586600 scopus 로고
    • G-factors and spin-lattice relaxation of conduction electrons
    • (eds F. Seitz & D. Turnbull). New York, NY: Academic Press
    • Yafet, Y. 1963 G-factors and spin-lattice relaxation of conduction electrons. In Solid state physics-advances in research and applications (eds F. Seitz & D. Turnbull). New York, NY: Academic Press.
    • (1963) Solid State Physics-advances in Research and Applications
    • Yafet, Y.1
  • 92
    • 73649106208 scopus 로고    scopus 로고
    • Theory of the spin relaxation of conduction electrons in silicon
    • doi:10.1103/PhysRevLett.104.016601
    • Cheng, J. L., Wu, M. W. & Fabian, J. 2010 Theory of the spin relaxation of conduction electrons in silicon. Phys. Rev. Lett. 104, 016601. (doi:10.1103/PhysRevLett.104.016601)
    • (2010) Phys. Rev. Lett. , vol.104 , pp. 016601
    • Cheng, J.L.1    Wu, M.W.2    Fabian, J.3
  • 93
    • 42549106839 scopus 로고    scopus 로고
    • Spin dephasing in drift-dominated semiconductor spintronics devices
    • doi:10.1103/PhysRevB.77.165331
    • Huang, B. & Appelbaum, I. 2008 Spin dephasing in drift-dominated semiconductor spintronics devices. Phys. Rev. B 77, 165331. (doi:10.1103/ PhysRevB.77.165331)
    • (2008) Phys. Rev. B , vol.77 , pp. 165331
    • Huang, B.1    Appelbaum, I.2
  • 96
    • 0346506367 scopus 로고
    • The mobility and life of injected holes and electrons in Germanium
    • doi:10.1103/PhysRev.81.835
    • Haynes, J. & Shockley, W. 1951 The mobility and life of injected holes and electrons in Germanium. Phys. Rev. 81, 835-843. (doi:10.1103/PhysRev. 81.835)
    • (1951) Phys. Rev. , vol.81 , pp. 835-843
    • Haynes, J.1    Shockley, W.2
  • 97
    • 71649091695 scopus 로고    scopus 로고
    • A Haynes-Shockley experiment for spin-polarized electron transport in silicon
    • doi:10.1016/j.sse.2009.09.012
    • Appelbaum, I. 2009 A Haynes-Shockley experiment for spin-polarized electron transport in silicon. Solid State Electron. 53, 1242-1245. (doi:10.1016/j.sse.2009.09.012)
    • (2009) Solid State Electron. , vol.53 , pp. 1242-1245
    • Appelbaum, I.1
  • 98
    • 33847372049 scopus 로고    scopus 로고
    • Electrical detection of spin transport in lateral ferromagnet- semiconductor devices
    • doi:10.1038/nphys543
    • Lou, X. et al. 2007 Electrical detection of spin transport in lateral ferromagnet-semiconductor devices. Nat. Phys. 3, 197-202. (doi:10.1038/nphys543)
    • (2007) Nat. Phys. , vol.3 , pp. 197-202
    • Lou, X.1
  • 99
    • 0037129190 scopus 로고    scopus 로고
    • Electrical detection of spin precession in a metallic mesoscopic spin valve
    • DOI 10.1038/416713a
    • Jedema, F. J., Heersche, H. B., Filip, A. T., Baselmans, J. J. A. & van Wees, B. J. 2002 Electrical detection of spin precession in a metallic mesoscopic spin valve. Nature 416, 713-716. (doi:10.1038/416713a) (Pubitemid 34429142)
    • (2002) Nature , vol.416 , Issue.6882 , pp. 713-716
    • Jedema, F.J.1    Heersche, H.B.2    Filip, A.T.3    Baselmans, J.J.A.4    Van Wees, B.J.5
  • 100
    • 70350048644 scopus 로고    scopus 로고
    • Modeling spin transport with current-sensing spin detectors
    • doi:10.1063/1.3241080
    • Li, J. & Appelbaum, I. 2009 Modeling spin transport with current-sensing spin detectors. Appl. Phys. Lett. 95, 152501. (doi:10.1063/1.3241080)
    • (2009) Appl. Phys. Lett. , vol.95 , pp. 152501
    • Li, J.1    Appelbaum, I.2
  • 101
    • 34547309735 scopus 로고    scopus 로고
    • Transit-time spin field-effect transistor
    • DOI 10.1063/1.2752015
    • Appelbaum, I. & Monsma, D. 2007 Transit-time spin field-effect transistor. Appl. Phys. Lett. 90, 262501. (doi:10.1063/1.2752015) (Pubitemid 47141115)
    • (2007) Applied Physics Letters , vol.90 , Issue.26 , pp. 262501
    • Appelbaum, I.1    Monsma, D.J.2
  • 102
  • 103
    • 72649091977 scopus 로고    scopus 로고
    • Hyperfine interactions and spin transport in ferromagnet-semiconductor heterostructures
    • doi:10.1103/PhysRevB.80.161206
    • Chan, M. K., Hu, Q. O., Zhang, J., Kondo, T., Palmstrøm, C. J. & Crowell, P. A. 2009 Hyperfine interactions and spin transport in ferromagnet-semiconductor heterostructures. Phys. Rev. B 80, 161206. (doi:10.1103/PhysRevB.80.161206)
    • (2009) Phys. Rev. B , vol.80 , pp. 161206
    • Chan, M.K.1    Hu, Q.O.2    Zhang, J.3    Kondo, T.4    Palmstrøm, C.J.5    Crowell, P.A.6
  • 104
    • 78751556315 scopus 로고    scopus 로고
    • Proposal for a topological plasmon spin rectifier
    • doi:10.1063/1.3541545
    • Appelbaum, I., Drew, H. D. & Fuhrer, M. S. 2011 Proposal for a topological plasmon spin rectifier. Appl. Phys. Lett. 98, 023103. (doi:10.1063/1.3541545)
    • (2011) Appl. Phys. Lett. , vol.98 , pp. 023103
    • Appelbaum, I.1    Drew, H.D.2    Fuhrer, M.S.3
  • 105
    • 79960619291 scopus 로고    scopus 로고
    • Spin-polarized transient electron trapping in phosporus-doped Si
    • doi:10.1103/PhysRevLett.106.217202
    • Lu, Y., Li, J. & Appelbaum, I. 2011 Spin-polarized transient electron trapping in phosporus-doped Si. Phys. Rev. Lett. 106, 217202. (doi:10.1103/PhysRevLett.106.217202)
    • (2011) Phys. Rev. Lett. , vol.106 , pp. 217202
    • Lu, Y.1    Li, J.2    Appelbaum, I.3
  • 106
    • 34547220430 scopus 로고    scopus 로고
    • Spin lifetime in silicon in the presence of parasitic electronic effects
    • DOI 10.1063/1.2750411
    • Huang, B., Monsma, D. J. & Appelbaum, I. 2007 Spin lifetime in silicon in the presence of parasitic electronic effects. J. Appl. Phys. 102, 013901. (doi:10.1063/1.2750411) (Pubitemid 47114558)
    • (2007) Journal of Applied Physics , vol.102 , Issue.1 , pp. 013901
    • Huang, B.1    Monsma, D.J.2    Appelbaum, I.3
  • 107
    • 70349155382 scopus 로고    scopus 로고
    • 2 interface
    • doi:10.1103/PhysRevLett.103.117202
    • 2 interface. Phys. Rev. Lett. 103, 117202. (doi:10.1103/PhysRevLett.103.117202)
    • (2009) Phys. Rev. Lett. , vol.103 , pp. 117202
    • Jang, H.-J.1    Appelbaum, I.2
  • 108
    • 78649244051 scopus 로고    scopus 로고
    • Magnetocurrent of ballistically injected electrons in insulating silicon
    • doi:10.1063/1.3511681
    • Jang, H.-J. & Appelbaum, I. 2010 Magnetocurrent of ballistically injected electrons in insulating silicon. Appl. Phys. Lett. 97, 182108. (doi:10.1063/1.3511681)
    • (2010) Appl. Phys. Lett. , vol.97 , pp. 182108
    • Jang, H.-J.1    Appelbaum, I.2
  • 109
    • 1042265142 scopus 로고    scopus 로고
    • Inelastic scattering approach to the theory of a magnetic tunnel transistor source
    • doi:10.1103/PhysRevB.68.241310
    • Rashba, E. 2003 Inelastic scattering approach to the theory of a magnetic tunnel transistor source. Phys. Rev. B 68, 241310. (doi:10.1103/PhysRevB.68. 241310)
    • (2003) Phys. Rev. B , vol.68 , pp. 241310
    • Rashba, E.1
  • 110
    • 78650965956 scopus 로고    scopus 로고
    • Time-of-flight spectroscopy via spin precession: The Larmor clock and anomalous spin dephasing in silicon
    • doi:10.1103/PhysRevB.82.241202
    • Huang, B. & Appelbaum, I. 2010 Time-of-flight spectroscopy via spin precession: the Larmor clock and anomalous spin dephasing in silicon. Phys. Rev. B 82, 241202. (doi:10.1103/PhysRevB.82.241202)
    • (2010) Phys. Rev. B , vol.82 , pp. 241202
    • Huang, B.1    Appelbaum, I.2


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