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Volumn 68, Issue 24, 2003, Pages 2413101-2413104

Inelastic scattering approach to the theory of a magnetic tunnel transistor source

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION; ARTICLE; CALCULATION; DEVICE; ELECTRON; ENERGY; GEOMETRY; MAGNETISM; PARAMETER; POLARIZATION; SEMICONDUCTOR; TECHNIQUE; TEMPERATURE DEPENDENCE; THEORY;

EID: 1042265142     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (6)

References (34)
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    • note
    • e includes the contribution of the active electrons only. Parasitic currents coming from the resonant tunneling at lower energies are disregarded.
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    • note
    • The notion of the minority and majority electrons is not unambiguous and may depend on the definition (the contribution to the magnetization or to some transport processes). This unambiguity is immaterial for the phenomenological theory of this paper.
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    • e.
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    • Experiment should make choice between this scenario of a Gaussian distribution near the collector and a competing scenario of a narrow beam emitted from a specular barrier and widening gradually (while crossing the base) because of the small-angle elastic scattering.
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