Inelastic scattering approach to the theory of a magnetic tunnel transistor source

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 24, 2003, Pages 2413101-2413104

  Rasliba, Emmanuel I ^a,b  

^a UNIVERSITY AT BUFFALO   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION; ARTICLE; CALCULATION; DEVICE; ELECTRON; ENERGY; GEOMETRY; MAGNETISM; PARAMETER; POLARIZATION; SEMICONDUCTOR; TECHNIQUE; TEMPERATURE DEPENDENCE; THEORY;

EID: 1042265142     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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