Theory of the spin relaxation of conduction electrons in silicon

Physical Review Letters

Volumn 104, Issue 1, 2010, Pages

  Cheng, J L ^a,b   Wu, M W ^a   Fabian, J ^b  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SILICON; CONDUCTION ELECTRONS; PSEUDOPOTENTIAL MODELS; SPIN INJECTION; SPIN RELAXATION; SPIN RELAXATION TIME; SPIN RESONANCE; SPIN-FLIP SCATTERING; SPIN-RELAXATION RATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE;

ELECTRONS; HOT ELECTRONS; SEMICONDUCTING SILICON COMPOUNDS;

SPIN DYNAMICS;

EID: 73649106208     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.104.016601     Document Type: Article

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28. We used revised spin injection data [B. Huang and I. Appelbaum (unpublished)]. In the original publication the spin relaxation was obtained by using P (IC2P-IC2AP)/IC1 for the spin polarization (the notation applies to Ref. ), to make the most conservative lifetime estimate possible. The revised data were extracted using the conventional definition P=(IC2P-IC2AP)/(IC2P+IC2AP). We are indebted to I. Appelbaum for this communication.