A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain

Applied Physics Letters

Volumn 84, Issue 13, 2004, Pages 2307-2309

  Sugahara, Satoshi ^a   Tanaka, Masaaki ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; CAPACITANCE; FERMI LEVEL; FERROMAGNETIC MATERIALS; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; MATHEMATICAL MODELS; PROBABILITY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; TRANSCONDUCTANCE;

ANTIPARALLEL MAGNETIZATION; HALF-METALLIC-FERROMAGNET (HMF) CONTACTS; MAGNETOCURRENTS; SPIN TRANSISTORS;

MOSFET DEVICES;

EID: 2142649268     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1689403     Document Type: Article

References (22)

1. M. Johonson, Phys. Rev. Lett. 70, 2142 (1993).
2. D. J. Monsma, J. C. Lodder, Th. J. A. Popma, and B. Dieny, Phys. Rev. Lett. 74, 5260 (1995).
3. K. Mizushima, T. Kino, T. Yamaguchi; and K. Tanaka, IEEE Trans. Magn. 33, 3500 (1997).
4. S. van Dijken, X. Jiang, and S.S.P. Parkin, Appl. Phys. Lett. 80, 3364 (2002).
5. S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990).
6. S. Sugahara and M. Tanaka, in Extended Abstracts of the Ninth Symposium on the Physics and Applications of Spin-related Phenomena in Semi-conductors, Tokyo, June 2003, pp. 221-224.
7. T. Matsuno, S. Sugahara and M. Tanaka, in Extended Abstracts of the Ninth Symposium on the Physics and Applications of Spin-related Phenomena in Semiconductors, Tokyo, June 2003, pp. 225-227.
8. C. M. Hu, J. Nitta, A. Jensen, J. B. Hansen, and H. Takayanagi, Physica E (Amsterdam) 10, 467 (2001).
9. T. Lepselter and S. M. Sze, Proc. IEEE 56, 1400 (1968).
10. R. Hattori and J. Shirafuji, Jpn. J. Appl. Phys., Part 1 33, 612 (1994).
11. R. A. de Groot, F. M. Mueller, P. G. van Engen, and K. H. J. Buschow, Phys. Rev. Lett. 50, 2024 (1983).
12. A. Yanase and K. Shiratori, J. Phys. Soc. Jpn. 53, 312 (1984).
13. K. Schwarz, J. Phys. F: Met. Phys. 16, L211 (1986).
14. M. Shirai, Physica E (Amsterdam) 10, 143 (2001); M. Shirai, J. Appl. Phys. 93, 6844 (2003).
15. M. Shirai, Physica E (Amsterdam) 10, 143 (2001); M. Shirai, J. Appl. Phys. 93, 6844 (2003).
16. K. Sato and H. Katayama-Yoshida, Semicond. Sci. Technol. 17, 367 (2002).
17. S. Sugahara (unpublished).
18. R. Tsu and L. Esaki, Appl. Phys. Lett. 22, 562 (1973).
19. H. Iwai, Microelectron. J. 29, 671 (1998); IEEE J. Solid-State Circuits 34, 357 (1999).
20. H. Iwai, Microelectron. J. 29, 671 (1998); IEEE J. Solid-State Circuits 34, 357 (1999).
21. W. Saito, A. Itoh, S. Yamagami, and M. Asada, Jpn. J. Appl. Phys., Part 1 38, 6226 (1999).
22. J.A. Cooper, Jr., Proc. IEEE 69, 226 (1981).