Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers

Applied Physics Letters

Volumn 83, Issue 5, 2003, Pages 951-953

  Van Dijken, Sebastiaan ^a   Jiang, Xin ^a,b   Parkin, Stuart S P ^a  

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; FERMI LEVEL; MAGNETOELECTRIC EFFECTS; TUNNEL JUNCTIONS;

MAGNETIC TUNNEL TRANSISTORS;

TRANSISTORS;

EID: 0042378356     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1592001     Document Type: Article

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