Electrical injection and detection of spin-polarized electrons in silicon through an Fe3 Si/Si Schottky tunnel barrier

Applied Physics Letters

Volumn 94, Issue 18, 2009, Pages

  Ando, Y ^a   Hamaya, K ^a,b   Kasahara, K ^a   Kishi, Y ^a   Ueda, K ^a   Sawano, K ^c   Sadoh, T ^a   Miyao, M ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOKYO CITY UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER CONTACTS; ELECTRICAL INJECTIONS; EPITAXIALLY GROWN; LOW TEMPERATURES; NON LOCALS; OUTPUT SIGNALS; PROBE GEOMETRIES; REVERSE BIAS; SCHOTTKY; SCHOTTKY DIODES; SI LAYERS; SPIN-ACCUMULATIONS; SPIN-POLARIZED ELECTRONS; TUNNEL BARRIERS; TUNNEL CONDUCTANCES;

SCHOTTKY BARRIER DIODES; SILICON; SPIN DYNAMICS; TUNNELS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 65549144123     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3130211     Document Type: Article

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