Room-temperature electron spin transport in a highly doped Si channel

Applied Physics Express

Volumn 4, Issue 2, 2011, Pages

  Suzuki, Toshio ^a   Sasaki, Tomoyuki ^b   Oikawa, Tohru ^b   Shiraishi, Masashi ^c   Suzuki, Yoshishige ^c   Noguchi, Kiyoshi ^b  

^a Akita Research Institute of Advanced Technology   (Japan)

^b TDK CORPORATION   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON SPINS; LATERAL DEVICE; NONLOCAL; ROOM TEMPERATURE; SPIN CURRENTS; SPIN INJECTION; SPIN PRECESSION; SPIN TRANSPORT; SPIN-DIFFUSION LENGTH; SPURIOUS SIGNALS; TUNNEL BARRIER;

SPIN DYNAMICS;

EID: 79951642354     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.023003     Document Type: Article

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